BTB1188M3R Description
CYStech Electronics Corp. 2003.05.25 Revised Date : 1/7 Low Vcesat PNP Epitaxial Planar Transistor BTB1188M3R BVCEO IC RCESAT(typ) -30V -2A 0.22Ω.
BTB1188M3R Key Features
- Low VCE(sat), VCE(sat)=-0.65 V (typical), at IC / IB = -3A / -0.1A
- Excellent current gain characteristics
- plementary to BTD1766M3
- Pb-free lead plating and halogen-free package