BTN1053A3 Description
CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTN1053A3 Spec. 2013.05.22 Revised Date.
BTN1053A3 Key Features
- Excellent HFE Characteristics up to 1A
- Low Saturation Voltage, VCE(sat)=0.1V(typ)@IC=1A, IB=50mA
- 5A peak pulse current
- Pb-free lead plating and halogen-free package