Datasheet Summary
CYStech Electronics Corp.
Spec. No. : C818I3 Issued Date : 2010.01.26 Revised Date : 2014.02.26 Page No. : 1/7
NPN Epitaxial Planar Transistor
BVCEO IC RCESAT(MAX)
80V 2.5A 150mΩ
Features
- Excellent HFE Characteristics up to 1A
- Low Saturation Voltage, VCE(sat)=0.11V(typ)@IC=1A, IB=50mA
- 5A peak pulse current
- Pb-free lead plating and halogen-free package
Symbol
Outline
TO-251
B：Base C：Collector E：Emitter
BB CC E
Ordering Information
Device BTN1053I3-0-UA-G
Package
TO-251 (Pb-free lead plating and halogen-free package)
Shipping 80 pcs/tube, 50 tubes/box
Environment friendly grade : S for RoHS pliant products, G for RoHS pliant and green pound...