BTN1053I3 Description
CYStech Electronics Corp. 2010.01.26 Revised Date : 1/7 NPN Epitaxial Planar Transistor BTN1053I3 BVCEO IC RCESAT(MAX) 80V 2.5A 150mΩ.
BTN1053I3 Key Features
- Excellent HFE Characteristics up to 1A
- Low Saturation Voltage, VCE(sat)=0.11V(typ)@IC=1A, IB=50mA
- 5A peak pulse current
- Pb-free lead plating and halogen-free package