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BTN1053A3 - Low Vcesat NPN Epitaxial Planar Transistor

Key Features

  • Excellent HFE Characteristics up to 1A.
  • Low Saturation Voltage, VCE(sat)=0.1V(typ)@IC=1A, IB=50mA.
  • 5A peak pulse current.
  • Pb-free lead plating and halogen-free package Symbol BTN1053A3 Outline TO-92 B：Base C：Collector E：Emitter ECB Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating Junction Temperature Range Storage Temperature Range Note :.

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Datasheet Details

Part number BTN1053A3
Manufacturer CYStech
File Size 268.92 KB
Description Low Vcesat NPN Epitaxial Planar Transistor
Datasheet download datasheet BTN1053A3 Datasheet

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Full PDF Text Transcription (Reference)

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CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTN1053A3 Spec. No. : C818A3 Issued Date : 2013.05.22 Revised Date : 2013.06.25 Page No. : 1/7 Features • Excellent HFE Characteristics up to 1A • Low Saturation Voltage, VCE(sat)=0.1V(typ)@IC=1A, IB=50mA • 5A peak pulse current • Pb-free lead plating and halogen-free package Symbol BTN1053A3 Outline TO-92 B：Base C：Collector E：Emitter ECB Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating Junction Temperature Range Storage Temperature Range Note : *1. Single Pulse Pw≦350μs,Duty≦2%.