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BTP949L3 - PNP Epitaxial Planar Power Transistor

Key Features

  • Extremely low equivalent on-resistance, RCE(sat) = 75mΩ(max) @ IC = -3A, IB=-0.1A.
  • 6A continuous current(up to 20A peak).
  • Excellent current gain linearity.
  • Pb-free package Symbol BTP949L3 Outline C SOT-223 B:Base C:Collector E:Emitter E C B Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -6 V Collector Current (DC) Collector Cur.

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Datasheet Details

Part number BTP949L3
Manufacturer CYStech
File Size 201.65 KB
Description PNP Epitaxial Planar Power Transistor
Datasheet download datasheet BTP949L3 Datasheet

Full PDF Text Transcription for BTP949L3 (Reference)

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CYStech Electronics Corp. PNP Epitaxial Planar Power Transistor BTP949L3 Spec. No. : C657L3 Issued Date : 2005.10.14 Revised Date : Page No. : 1/6 Features • Extremely lo...

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ate : 2005.10.14 Revised Date : Page No. : 1/6 Features • Extremely low equivalent on-resistance, RCE(sat) = 75mΩ(max) @ IC = -3A, IB=-0.1A • 6A continuous current(up to 20A peak) • Excellent current gain linearity • Pb-free package Symbol BTP949L3 Outline C SOT-223 B:Base C:Collector E:Emitter E C B Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -6 V Collector Current (DC) Collector Current (Pulse) IC ICP -5.