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DAN217N3 - HIGH-SPEED SWITCHING DIODE

Description

The DAN217N3 consists of two diodes in a plastic surface mount package.

The diodes are connected in series and the unit is designed for high-speed switching application in hybrid thick and thin-film circuits.

Features

  • Small SMD Package (SOT-23).
  • Ultra-high Speed.
  • Low Forward Voltage.
  • Fast Reverse Recovery Time Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -65 ~ +150 °C Junction Temperature +150 °C.
  • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 250 mW.
  • Maximum Voltages and Currents (Ta=25°C) Reverse Voltage 120 V Repetitive Reverse Voltage 120 V Forward Current 215 mA Repetitive Forward Current 500 mA Forward.

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Datasheet preview – DAN217N3

Datasheet Details

Part number DAN217N3
Manufacturer CYStech
File Size 214.46 KB
Description HIGH-SPEED SWITCHING DIODE
Datasheet download datasheet DAN217N3 Datasheet
Additional preview pages of the DAN217N3 datasheet.

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Full PDF Text Transcription

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CYStech Electronics Corp. HIGH-SPEED SWITCHING DIODE DAN217N3 Spec. No. : C303N3C Issued Date : 2002.12.18 Revised Date :2013.09.06 Page No. : 1/6 Description The DAN217N3 consists of two diodes in a plastic surface mount package. The diodes are connected in series and the unit is designed for high-speed switching application in hybrid thick and thin-film circuits. Features • Small SMD Package (SOT-23) • Ultra-high Speed • Low Forward Voltage • Fast Reverse Recovery Time Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ............................................................................................................. -65 ~ +150 °C Junction Temperature............................................................................................................
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