DAN212N3 - High-speed switching diode

CYStech

General Description

The DAN212N3 is a high-speed switching diode fabricated in planar technology, and encapsulated in the small SOT-23 plastic SMD package.

Key Features

Small plastic SMD package.
High switching speed: max. 4ns.
Continuous reverse voltage: max. 100V.
Repetitive peak reverse voltage: max. 110V.
Repetitive peak forward current: max. 500mA.

📥 Download Datasheet

DAN212N3 high-speed switching diode by CYStech - Datasheet Preview

Datasheet Details

Part number	DAN212N3
Manufacturer	CYStech
File Size	241.41 KB
Description	High-speed switching diode
Datasheet	DAN212N3 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
DAN215	Epitaxial Planar Silicon Diode Arrays	Rohm
DAN217	Switching diode	Rohm
DAN217	SWITCHING DIODE	JCET
DAN217	Surface mount switching diode	GME
DAN217	SURFACE MOUNT FAST SWITCHING DIODE	LITE-ON

Other Datasheets by CYStech

Part Number	Description
DAN217N3	HIGH-SPEED SWITCHING DIODE
DAN217S3	HIGH-SPEED SWITCHING DIODE
DAN202S3	High-speed double diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

CYStech Electronics Corp. High –speed switching diode DAN212N3 Spec. No. : C303N3R Issued Date : 2003.04.12 Revised Date : 2010.10.21 Page No. : 1/6 Description The DAN212N3 is a high-speed switching diode fabricated in planar technology, and encapsulated in the small SOT-23 plastic SMD package. Equivalent Circuit Outline DAN212N3 21 3 1：Anode 2：Not Connected 3：Cathode SOT-23 Cathode Anode NC Features • Small plastic SMD package • High switching speed: max. 4ns • Continuous reverse voltage: max. 100V • Repetitive peak reverse voltage: max. 110V • Repetitive peak forward current: max. 500mA. Applications • High-speed switching in thick and thin-film circuits.