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DAN217N3 Datasheet High-speed Switching Diode

Manufacturer: CYStech

Overview: CYStech Electronics Corp. HIGH-SPEED SWITCHING DIODE DAN217N3 Spec. No. : C303N3C Issued Date : 2002.12.18 Revised Date :2013.09.06 Page No.

Datasheet Details

Part number DAN217N3
Manufacturer CYStech
File Size 214.46 KB
Description HIGH-SPEED SWITCHING DIODE
Datasheet DAN217N3-CYStech.pdf

General Description

The DAN217N3 consists of two diodes in a plastic surface mount package.

The diodes are connected in series and the unit is designed for high-speed switching application in hybrid thick and thin-film circuits.

Key Features

  • Small SMD Package (SOT-23).
  • Ultra-high Speed.
  • Low Forward Voltage.
  • Fast Reverse Recovery Time Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -65 ~ +150 °C Junction Temperature +150 °C.
  • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 250 mW.
  • Maximum Voltages and Currents (Ta=25°C) Reverse Voltage 120 V Repetitive Reverse Voltage 120 V Forward Current 215 mA Repetitive Forward Current 500 mA Forward.

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