Datasheet Details
| Part number | DAN217N3 |
|---|---|
| Manufacturer | CYStech |
| File Size | 214.46 KB |
| Description | HIGH-SPEED SWITCHING DIODE |
| Datasheet |
 DAN217N3 Datasheet
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General Description
The DAN217N3 consists of two diodes in a plastic surface mount package.
The diodes are connected in series and the unit is designed for high-speed switching application in hybrid thick and thin-film circuits.
Key Features
- Small SMD Package (SOT-23).
- Ultra-high Speed.
- Low Forward Voltage.
- Fast Reverse Recovery Time Absolute Maximum Ratings.
- Maximum Temperatures Storage Temperature -65 ~ +150 °C Junction Temperature +150 °C.
- Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 250 mW.
- Maximum Voltages and Currents (Ta=25°C) Reverse Voltage 120 V Repetitive Reverse Voltage 120 V Forward Current 215 mA Repetitive Forward Current 500 mA Forward.