CYStech Electronics Corp.
Spec. No. : C915C3
Issued Date : 2014.08.22
Revised Date : 2017.10.17
Page No. : 2/8
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C, VGS=4.5V
Continuous Drain Current @ TA=70°C, VGS=4.5V
Pulsed Drain Current (Notes 1, 2)
Power Dissipation
ESD susceptibility
Operating Junction and Storage Temperature
Symbol
VDS
VGS
ID
IDM
PD
VESD
Tj, Tstg
Limits
20
±10
700 (Note 3)
560 (Note 3)
2.8
280 (Note 3)
1400 (Note 4)
-55~+150
Unit
V
mA
A
mW
V
°C
Thermal Performance
Parameter
Thermal Resistance, Junction-to-Ambient, max (Note 3)
Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width≤ 300μs, duty cycle≤2%.
3. Surface mounted on 1 in² copper pad of FR-4 board.
4. Human body model, 1.5kΩ in series with 100pF.
Symbol
Rth,ja
Limit
450
Unit
°C/W
Electrical Characteristics (Tj=25°C, unless otherwise noted)
Symbol
Min. Typ. Max. Unit
Test Conditions
Static
BVDSS
20 - - V VGS=0V, ID=250μA
VGS(th)
0.45 0.66
1.0
V VDS=VGS, ID=250μA
IGSS - - ±10
VGS=±10V, VDS=0V
IDSS
- - 1 μA VDS=16V, VGS=0V
- - 10
VDS=16V, VGS=0V (Tj=70°C)
*RDS(ON)
-
-
299
550
390
705
mΩ
VGS=4.5V, ID=650mA
VGS=2.5V, ID=500mA
- 1.05 2.1 Ω VGS=1.8V, ID=200mA
*GFS
- 870 - mS VDS=10V, ID=400mA
Dynamic
Ciss
Coss
Crss
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
Source-Drain Diode
*VSD
-
-
-
-
-
-
-
-
-
-
-
35 -
11 -
9-
7-
21 -
25 -
47 -
1-
0.05 -
0.4 -
0.78 1.0
pF VDS=15V, VGS=0, f=1MHz
ns
VDS=15V, ID=500mA, VGS=4.5V,
RG=6Ω
nC VDS=15V, ID=500mA, VGS=4.5V
V VGS=0V, IS=150mA
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTA340N02KC3
CYStek Product Specification
