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MTB020N10RE3 - N-Channel Enhancement Mode Power MOSFET

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CYStech

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MTB020N10RE3 N-Channel Enhancement Mode Power MOSFET by CYStech - Datasheet Preview — Datasheet preview – MTB020N10RE3

Datasheet Details

Part number	MTB020N10RE3
Manufacturer	CYStech
File Size	625.05 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTB020N10RE3 Datasheet
Additional preview pages of the MTB020N10RE3 datasheet.

Product details

Features

Low On Resistance.
Simple Drive Requirement.
Low Gate Charge.
Fast Switching Characteristic.
RoHS compliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=15A 100V 33A 6.6A 21.3mΩ(typ) 26.5 mΩ(typ) Symbol MTB020N10RE3 Outline TO-220 G：Gate D：Drain S：Source GDS Ordering Information Device Package Shipping MTB020N10RE3-0-UB-X TO-220 (Pb-free lead plating package) 50 pcs/tube, 20 tubes/box, 4 boxes / carton.

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Published: Mar 6, 2020 |