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CYStech

MTB050N10KRQ8 Datasheet Preview

MTB050N10KRQ8 Datasheet

N-Channel Power MOSFET

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CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTB050N10KRQ8
Spec. No. : C059Q8
Issued Date : 2017.09.08
Revised Date : 2020.02.25
Page No. : 1/9
Features
Single drive requirement
Low on-resistance
Fast switching characteristic
ESD protected gate
Pb-free & halogen-free package
BVDSS
ID @ TA=25°C, VGS=10V
RDS(ON)@VGS=10V, ID=4A
RDS(ON)@VGS=4.5V, ID=3A
100V
5A
48mΩ(typ)
57 mΩ(typ)
Symbol
MTB050N10KRQ8
Outline
SOP-8
D
D
D
D
GGate DDrain SSource
Pin 1
G
S
S
S
Ordering Information
Device
MTB050N10KRQ8-0-T3-G
MTB050N10KRQ8-0-TF-G
Package
Shipping
SOP-8
(RoHS compliant & Halogen-free package)
2500 pcs / Tape & Reel
SOP-8
(RoHS compliant & Halogen-free package)
4000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13reel, TF : 4000 pcs/tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB050N10KRQ8
CYStek Product Specification




CYStech

MTB050N10KRQ8 Datasheet Preview

MTB050N10KRQ8 Datasheet

N-Channel Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C059Q8
Issued Date : 2017.09.08
Revised Date : 2020.02.25
Page No. : 2/9
Absolute Maximum Ratings (Tc=25C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=10V, TC=25C
Continuous Drain Current @ VGS=10V, TC=100C
Continuous Drain Current @ TA=25C, VGS=10V
Continuous Drain Current @ TA=70C, VGS=10V
Continuous Drain Current @ TA=25C, VGS=10V
Continuous Drain Current @ TA=70C, VGS=10V
Pulsed Drain Current
Avalanche Current @ L=0.1mH
Avalanche Energy @ L=1mH, ID=10A, VDD=25V
Repetitive Avalanche Energy @ L=0.05mH
Total Power Dissipation
TA=25 C
TA=70 C
Operating Junction and Storage Temperature
Symbol
VDS
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
Limits
100
±20
6.7
4.2
5.0 (Note 3)
4.0 (Note 3)
3.0 (Note 4)
2.4 (Note 4)
27 (Note 1)
24
50 (Note 2)
1.6 (Note 2)
3.1
2.0
-55~+150
Unit
V
A
mJ
W
C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case
Thermal Resistance, Junction-to-ambient (Note 3)
Thermal Resistance, Junction-to-ambient (Note 4)
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle 1%
3. When mounted on a 1 in2 pad of 2 oz copper, t10s.
4. When mounted on minimum pad.
Symbol
RθJC
RθJA
Value
25
40
125
Unit
C/W
Characteristics (TC=25C, unless otherwise specified)
Symbol
Min. Typ. Max.
Unit Test Conditions
Static
BVDSS
VGS(th)
GFS
IGSS
IDSS
*RDS(ON)
Dynamic
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
100 -
1-
-8
--
--
--
- 48
- 57
- 16.6
-3
- 2.6
-
2.5
-
±10
1
25
63
80
25
-
-
V
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
S VDS =10V, ID=3A
VGS=±16V, VDS=0V
μA VDS =80V, VGS =0V
VDS =80V, VGS =0V, Tj=125C
mΩ
VGS =10V, ID=4A
VGS =4.5V, ID=3A
nC VDS=50V, ID=4A, VGS=10V
MTB050N10KRQ8
CYStek Product Specification


Part Number MTB050N10KRQ8
Description N-Channel Power MOSFET
Maker CYStech
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