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CYStech

MTB050N15BRV8 Datasheet Preview

MTB050N15BRV8 Datasheet

N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTB050N15BRV8
Spec. No. : C033V8
Issued Date : 2017.08.21
Revised Date : 2020.02.25
Page No. : 1/9
Features
Single Drive Requirement
Low On-resistance
Fast Switching Characteristic
Pb-free lead plating and halogen-free package
BVDSS
ID @ TC=25°C, VGS=10V
ID @ TA=25°C, VGS=10V
VGS=10V, ID=3.4A
RDSON(TYP)
VGS=4.5V, ID=3.3A
150V
12.4A
4.3A
47.5mΩ
53mΩ
Equivalent Circuit
MTB050N15BRV8
Outline
Pin 1
DFN3×3
GGate DDrain SSource
Ordering Information
Device
MTB050N15BRV8-0-T6-G
Package
Shipping
DFN3×3
(Pb-free lead plating and halogen-free package)
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB050N15BRV8
CYStek Product Specification




CYStech

MTB050N15BRV8 Datasheet Preview

MTB050N15BRV8 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25C, unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=10V, TC=25C
Continuous Drain Current @ VGS=10V, TC=100C
Continuous Drain Current @ VGS=10V, TA=25C
Continuous Drain Current @ VGS=10V, TA=70C
Pulsed Drain Current
Avalanche Current @ L=0.1mH
Avalanche Energy @ L=1mH, ID=16A, VDD=25V
TC=25
Total Power Dissipation
TC=100
TA=25
TA=70
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDSM
IDM
IAS
EAS
PD
PDSM
Tj, Tstg
Spec. No. : C033V8
Issued Date : 2017.08.21
Revised Date : 2020.02.25
Page No. : 2/9
Limits
150
±20
12.4
7.8
4.3
3.4
50 *1
36
128
21
8.4
2.5 *2
1.6 *2
-55~+150
Unit
V
A
mJ
W
C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
RθJC
RθJA
6
50 *2
C/W
Note : 1. Pulse width limited by maximum junction temperature.
2. Surface mounted on a 1 in²pad of 2oz copper, t10s. In practice RθJA will be determined by customers PCB characteristics.
125°C/W when mounted on a minimum pad of 2 oz. copper.
3. 100% tested by conditions of L=0.1mH, IAS=4.5A, VGS=10V, VDD=25V
Characteristics (TC=25C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
150
1
-
-
-
2.5
V
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
GFS *1
IGSS
-
-
15.3 -
- ±100
S VDS =5V, ID=5A
nA VGS=±20V, VDS=0V
IDSS
- - 1 μA VDS =120V, VGS =0V
- -5
VDS =120V, VGS =0V, Tj=55C
RDS(ON) *1
-
-
47.5
53.0
65
76
mΩ
VGS =10V, ID=3.4A
VGS =4.5V, ID=3.3A
Dynamic
Ciss - 1385 -
Coss
- 65 - pF VDS=80V, VGS=0V, f=1MHz
Crss - 23 -
Qg *1, 2 - 25.4 -
Qgs *1, 2
-
4.3
-
nC VDS=120V, VGS=10V, ID=5.4A
Qgd *1, 2
-
5.3
-
MTB050N15BRV8
CYStek Product Specification


Part Number MTB050N15BRV8
Description N-Channel Enhancement Mode Power MOSFET
Maker CYStech
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