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MTB050N15BRV8 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Single Drive Requirement.
  • Low On-resistance.
  • Fast Switching Characteristic.
  • Pb-free lead plating and halogen-free package BVDSS ID @ TC=25°C, VGS=10V ID @ TA=25°C, VGS=10V VGS=10V, ID=3.4A RDSON(TYP) VGS=4.5V, ID=3.3A 150V 12.4A 4.3A 47.5mΩ 53mΩ Equivalent Circuit MTB050N15BRV8 Outline Pin 1 DFN3×3 G：Gate D：Drain S：Source Ordering Information Device MTB050N15BRV8-0-T6-G Package Shipping DFN3×3 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel.

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Datasheet Details

Part number MTB050N15BRV8
Manufacturer CYStech
File Size 703.47 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB050N15BRV8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTB050N15BRV8 Spec. No. : C033V8 Issued Date : 2017.08.21 Revised Date : 2020.02.25 Page No. : 1/9 Features  Single Drive Requirement  Low On-resistance  Fast Switching Characteristic  Pb-free lead plating and halogen-free package BVDSS ID @ TC=25°C, VGS=10V ID @ TA=25°C, VGS=10V VGS=10V, ID=3.4A RDSON(TYP) VGS=4.5V, ID=3.3A 150V 12.4A 4.3A 47.