MTB050N15ARJ3 - N-Channel Power MOSFET

CYStech

Key Features

Low On Resistance.
Simple Drive Requirement.
Low Gate Charge.
Fast Switching Characteristic.
RoHS compliant package BVDSS ID@TC=25C, VGS=10V RDS(ON)@VGS=10V, ID=15A RDS(ON)@VGS=4.5V, ID=10A 150V 20.6A 46.4 mΩ(typ) 50.8 mΩ(typ) Symbol MTB050N15ARJ3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device Package Shipping MTB050N15ARJ3-0-T3-G TO-252 (Pb-free lead plating and halogen-free package) 2500 pcs / Tape & Reel Environment frie.

MTB050N15ARJ3 n-channel power mosfet by CYStech - Datasheet Preview

Datasheet Details

Part number	MTB050N15ARJ3
Manufacturer	CYStech
File Size	662.82 KB
Description	N-Channel Power MOSFET
Datasheet	MTB050N15ARJ3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTB050N15ARJ3 Spec. No. : C035J3 Issued Date : 2019.06.03 Revised Date : Page No. : 1/ 9 Features  Low On Resistance  Simple Drive Requirement  Low Gate Charge  Fast Switching Characteristic  RoHS compliant package BVDSS ID@TC=25C, VGS=10V RDS(ON)@VGS=10V, ID=15A RDS(ON)@VGS=4.5V, ID=10A 150V 20.6A 46.4 mΩ(typ) 50.