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MTB050N15ARJ3 - N-Channel Power MOSFET

Features

  • Low On Resistance.
  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • RoHS compliant package BVDSS ID@TC=25C, VGS=10V RDS(ON)@VGS=10V, ID=15A RDS(ON)@VGS=4.5V, ID=10A 150V 20.6A 46.4 mΩ(typ) 50.8 mΩ(typ) Symbol MTB050N15ARJ3 Outline TO-252(DPAK) G:Gate D:Drain S:Source G DS Ordering Information Device Package Shipping MTB050N15ARJ3-0-T3-G TO-252 (Pb-free lead plating and halogen-free package) 2500 pcs / Tape & Reel Environment frie.

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Datasheet Details

Part number MTB050N15ARJ3
Manufacturer CYStech
File Size 662.82 KB
Description N-Channel Power MOSFET
Datasheet download datasheet MTB050N15ARJ3 Datasheet
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Full PDF Text Transcription

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CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTB050N15ARJ3 Spec. No. : C035J3 Issued Date : 2019.06.03 Revised Date : Page No. : 1/ 9 Features  Low On Resistance  Simple Drive Requirement  Low Gate Charge  Fast Switching Characteristic  RoHS compliant package BVDSS ID@TC=25C, VGS=10V RDS(ON)@VGS=10V, ID=15A RDS(ON)@VGS=4.5V, ID=10A 150V 20.6A 46.4 mΩ(typ) 50.
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