MTB1K0N20KL3 - N-Channel Enhancement Mode Power MOSFET

CYStech

Datasheet Details

Low Gate Charge.
Simple Drive Requirement.
ESD protected gate, HBM 6kV, typically.
Pb-free lead plating & Halogen-free package BVDSS ID @ VGS=10V, TA=25°C RDSON@VGS=10V, ID=2A RDSON@VGS=4.5V, ID=1A 200V 1A 830mΩ (typ. ) 777mΩ (typ. ) Equivalent Circuit MTB1K0N20KL3 Outline SOT-223 D G：Gate D：Drain S：Source S D G Ordering Information Device MTB1K0N20KL3-0-T3-G Package SOT-223 (Pb-free lead plating & Halogen-free package) Shipping 2500 pcs / Tape & Ree.

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CYStech MTB1K0N20KL3-like datasheet

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