• Part: MTB1K0N20KL3
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: CYStech
  • Size: 442.63 KB
Download MTB1K0N20KL3 Datasheet PDF
CYStech
MTB1K0N20KL3
Features - Low Gate Charge - Simple Drive Requirement - ESD protected gate, HBM 6k V, typically - Pb-free lead plating & Halogen-free package BVDSS ID @ VGS=10V, TA=25°C RDSON@VGS=10V, ID=2A RDSON@VGS=4.5V, ID=1A 200V 1A 830mΩ (typ.) 777mΩ (typ.) Equivalent Circuit Outline SOT-223 G:Gate D:Drain S:Source Ordering Information Device MTB1K0N20KL3-0-T3-G Package SOT-223 (Pb-free lead plating & Halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for Ro HS pliant products, G for Ro HS pliant and green pound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name Preliminary CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C, VGS=10V Continuous Drain Current @ TA=70°C, VGS=10V Pulsed Drain Current - 1...