MTB6D0N03AH8
MTB6D0N03AH8 is N-Channel Enhancement Mode Power MOSFET manufactured by CYStech.
Features
- Single Drive Requirement
- Low On-resistance
- Fast Switching Characteristic
- Dynamic dv/dt rating
- Repetitive Avalanche Rated
- Pb-free lead plating and Halogen-free package
BVDSS ID RDS(ON)@VGS=10V, ID=25A
RDS(ON)@VGS=4.5V, ID=20A
30V 56A 6.8 mΩ(typ)
10.4 mΩ(typ)
Symbol
Outline
Pin 1
DFN5×6
G:Gate D:Drain S:Source
Ordering Information
Device MTB6D0N03AH8-0-T6-G
Package
DFN 5 ×6 (Pb-free lead plating and halogen-free package)
Shipping 3000 pcs / tape & reel
Environment friendly grade : S for Ro HS pliant products, G for Ro HS pliant and green pound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products Product name
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C709H8 Issued Date : 2014.03.13 Revised Date : 2014.03.14
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=10V
Continuous Drain Current @ TC=100°C, VGS=10V
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=0.1m H, ID=30A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05m H
Total Power Dissipation
TC=25°C...