• Part: MTB6D0N03AH8
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: CYStech
  • Size: 377.18 KB
Download MTB6D0N03AH8 Datasheet PDF
CYStech
MTB6D0N03AH8
MTB6D0N03AH8 is N-Channel Enhancement Mode Power MOSFET manufactured by CYStech.
Features - Single Drive Requirement - Low On-resistance - Fast Switching Characteristic - Dynamic dv/dt rating - Repetitive Avalanche Rated - Pb-free lead plating and Halogen-free package BVDSS ID RDS(ON)@VGS=10V, ID=25A RDS(ON)@VGS=4.5V, ID=20A 30V 56A 6.8 mΩ(typ) 10.4 mΩ(typ) Symbol Outline Pin 1 DFN5×6 G:Gate D:Drain S:Source Ordering Information Device MTB6D0N03AH8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for Ro HS pliant products, G for Ro HS pliant and green pound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name CYStek Product Specification CYStech Electronics Corp. Spec. No. : C709H8 Issued Date : 2014.03.13 Revised Date : 2014.03.14 Page No. : 2/9 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=10V Continuous Drain Current @ TC=100°C, VGS=10V Pulsed Drain Current Avalanche Current Avalanche Energy @ L=0.1m H, ID=30A, RG=25Ω Repetitive Avalanche Energy @ L=0.05m H Total Power Dissipation TC=25°C...