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CYStech

MTB6D0N03ATH8 Datasheet Preview

MTB6D0N03ATH8 Datasheet

N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C709H8
Issued Date : 2014.04.30
Revised Date :
Page No. : 1/9
N-Channel Logic Level Enhancement Mode Power MOSFET
MTB6D0N03ATH8
Features
Single Drive Requirement
Low On-resistance
Fast Switching Characteristic
Dynamic dv/dt rating
Repetitive Avalanche Rated
Pb-free lead plating and Halogen-free package
BVDSS
ID
RDS(ON)@VGS=10V, ID=25A
RDS(ON)@VGS=4.5V, ID=20A
30V
56A
6.8 mΩ(typ)
10.4 mΩ(typ)
Symbol
MTB6D0N03ATH8
Outline
Pin 1
DFN5×6
GGate DDrain SSource
Ordering Information
Device
MTB6D0N03ATH8-0-T6-G
Package
DFN 5 ×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB6D0N03ATH8
CYStek Product Specification




CYStech

MTB6D0N03ATH8 Datasheet Preview

MTB6D0N03ATH8 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C709H8
Issued Date : 2014.04.30
Revised Date :
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=10V
Continuous Drain Current @ TC=100°C, VGS=10V
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=30A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH
Total Power Dissipation
TC=25°C
TC=100°C
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
Limits
30
±20
56
35
140 *1
30
45
15 *2
50
20
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Rth,j-c
2.5 °C/W
Thermal Resistance, Junction-to-ambient, max
Rth,j-a
50 *3
°C/W
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle1%
3. Surface mounted on 1 in² copper pad of FR-4 board, t10s; 125°C/W when mounted on minimum copper pad.
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
GFS *1
IGSS
IDSS
RDS(ON) *1
Dynamic
Ciss
Coss
Crss
30
1.0
-
-
-
-
-
-
-
-
-
- - V VGS=0V, ID=250μA
1.7 2.5
V VDS = VGS, ID=250μA
25 -
S VDS =5V, ID=20A
-
±100
nA VGS=±20V
-
-
1
25
μA
VDS =24V, VGS =0V
VDS =20V, VGS =0V, Tj=125°C
6.8
10.4
9
15
mΩ
VGS =10V, ID=25A
VGS =4.5V, ID=20A
802 -
153 -
98 -
pF VGS=0V, VDS=15V, f=1MHz
MTB6D0N03ATH8
CYStek Product Specification


Part Number MTB6D0N03ATH8
Description N-Channel Enhancement Mode Power MOSFET
Maker CYStech
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MTB6D0N03ATH8 Datasheet PDF






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