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CYStech

MTB6D0N03ATV8 Datasheet Preview

MTB6D0N03ATV8 Datasheet

N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C709V8
Issued Date : 2013.10.23
Revised Date :
Page No. : 1/9
N-Channel Logic Level Enhancement Mode Power MOSFET
MTB6D0N03ATV8
Features
Single Drive Requirement
Low On-resistance
Fast Switching Characteristic
Dynamic dv/dt rating
Repetitive Avalanche Rated
Pb-free lead plating and halogen-free package
BVDSS
ID
RDSON(TYP)
VGS=10V, ID=12A
VGS=4.5V, ID=8A
30V
12.5A
6.7mΩ
9.7mΩ
Equivalent Circuit
MTB6D0N03ATV8
Outline
Pin 1
DFN3×3
GGate DDrain SSource
Ordering Information
Device
MTB6D0N03ATV8-0-T6-G
Package
DFN3×3
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTB6D0N03ATV8
CYStek Product Specification




CYStech

MTB6D0N03ATV8 Datasheet Preview

MTB6D0N03ATV8 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C, unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=10V, TC=25°C
Continuous Drain Current @ VGS=10V, TC=100°C
Continuous Drain Current @ VGS=10V, TA=25°C
Continuous Drain Current @ VGS=10V, TA=70°C
Pulsed Drain Current
Avalanche Energy @ L=0.1mH, ID=14A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH
TC=25
Total Power Dissipation
TC=100
TA=25
TA=70
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
EAS
EAR
PD
PDSM
Tj, Tstg
Spec. No. : C709V8
Issued Date : 2013.10.23
Revised Date :
Page No. : 2/9
Limits
30
±20
36
23
12.5
10
120 *1
9.8
4.9
21
8.4
2.5 *2
1.6 *2
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Rth,j-c
6 °C/W
Thermal Resistance, Junction-to-ambient, max
Rth,j-a
50 *2
°C/W
Note : 1. Pulse width limited by maximum junction temperature.
2. Surface mounted on a 1 in² pad of 2oz copper. In practice Rth,j-a will be determined by customer’s PCB characteristics.
125°C/W when mounted on a minimum pad of 2 oz. copper.
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
GFS *1
IGSS
IDSS
RDS(ON) *1
30
1
-
-
-
-
-
-
--
1.7 2.5
V
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
18 -
S VDS =5V, ID=10A
-
±100
nA VGS=±20V
-
-
1
25
μA
VDS =24V, VGS =0
VDS =24V, VGS =0, Tj=125°C
6.7
9.7
9
13.5
mΩ
VGS =10V, ID=12A
VGS =4.5V, ID=8A
Dynamic
Ciss - 1522 -
Coss
- 141 -
Crss - 111 -
Qg *1, 2
-
17
-
Qgs *1, 2
-
5.2
-
Qgd *1, 2
-
4
-
pF VDS=15V, VGS=0V, f=1MHz
nC VDS=15V, VGS=10V, ID=12A
MTB6D0N03ATV8
CYStek Product Specification


Part Number MTB6D0N03ATV8
Description N-Channel Enhancement Mode Power MOSFET
Maker CYStech
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