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MTB6D0N03ATV8 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Single Drive Requirement.
  • Low On-resistance.
  • Fast Switching Characteristic.
  • Dynamic dv/dt rating.
  • Repetitive Avalanche Rated.
  • Pb-free lead plating and halogen-free package BVDSS ID RDSON(TYP) VGS=10V, ID=12A VGS=4.5V, ID=8A 30V 12.5A 6.7mΩ 9.7mΩ Equivalent Circuit MTB6D0N03ATV8 Outline Pin 1 DFN3×3 G：Gate D：Drain S：Source Ordering Information Device MTB6D0N03ATV8-0-T6-G Package DFN3×3 (Pb-free lead plating and halogen-free package).

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Datasheet Details

Part number MTB6D0N03ATV8
Manufacturer CYStech
File Size 313.60 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB6D0N03ATV8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C709V8 Issued Date : 2013.10.23 Revised Date : Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET MTB6D0N03ATV8 Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Dynamic dv/dt rating • Repetitive Avalanche Rated • Pb-free lead plating and halogen-free package BVDSS ID RDSON(TYP) VGS=10V, ID=12A VGS=4.5V, ID=8A 30V 12.5A 6.7mΩ 9.