MTBA5A10Q8
Description
The MTBA5A10Q8 provides the designer with the best bination of fast switching, ruggedized device design, ultra low on-resistance and cost effectiveness.
Key Features
- RDS(ON)=150mΩ(max.)@VGS=10V, ID=2.5A
- Simple drive requirement
- Low on-resistance
- Fast switching speed
- Dual N-ch MOSFET package
