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MTBA5A10Q8 Datasheet Preview

MTBA5A10Q8 Datasheet

Dual N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C591Q8
Issued Date : 2010.10.08
Revised Date : 2011.10.03
Page No. : 1/8
Dual N-Channel Logic Level Enhancement Mode Power MOSFET
MTBA5A10Q8
BVDSS
100V
ID 3A
RDSON(MAX)
150mΩ
Description
The MTBA5A10Q8 provides the designer with the best combination of fast switching, ruggedized device
design, ultra low on-resistance and cost effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications.
Features
RDS(ON)=150m(max.)@VGS=10V, ID=2.5A
Simple drive requirement
Low on-resistance
Fast switching speed
Dual N-ch MOSFET package
Pb-free lead plating & Halogen-free package
Equivalent Circuit
MTBA5A10Q8
Outline
SOP-8
GGate
SSource
DDrain
MTBA5A10Q8
CYStek Product Specification




CYStech

MTBA5A10Q8 Datasheet Preview

MTBA5A10Q8 Datasheet

Dual N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C591Q8
Issued Date : 2010.10.08
Revised Date : 2011.10.03
Page No. : 2/8
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, TC=25 °C
Continuous Drain Current, TC=100 °C
Pulsed Drain Current (Note 1)
Power Dissipation
TA=25°C (Note 3)
TA=100°C
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
ID
IDM
PD
Tj ; Tstg
Limits
100
±20
3
2.1
12
2.4
1.3
-55~+175
Unit
V
A
W
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Rth,j-c
25 °C/W
Thermal Resistance, Junction-to-ambient, max
Rth,j-a
62.5 *3 °C/W
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle1%
3. Surface mounted on 1 in² copper pad of FR-4 board, 125°C/W when mounted on minimum copper pad
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
GFS *1
IGSS
IDSS
ID(ON) *1
*RDS(ON) *1
Dynamic
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
td(ON) *1, 2
tr *1, 2
td(OFF) *1, 2
tf *1, 2
Ciss
Coss
Crss
100 -
- V VGS=0, ID=250μA
1 1.5 3 V VDS = VGS, ID=250μA
- 8 - S VDS =5V, ID=2.5A
-
-
±100
nA VGS=±20
-
-
-
-
1
25
μA
VDS =80V, VGS =0
VDS =70V, VGS =0, Tj=125°C
3 - - A VDS =5V, VGS =10V
-
-
125
168
150
225
mΩ
VGS =10V, ID=2.5A
VGS =5V, ID=2A
- 18.8 -
- 3.8 - nC ID=2.5A, VDS=80V, VGS=10V
- 4.5 -
- 15 -
-
-
35
25
-
-
ns
VDS=50V, ID=1A,VGS=10V,
RG=6Ω
- 25 -
- 740 -
- 62 - pF VGS=0V, VDS=20V, f=1MHz
- 50 -
MTBA5A10Q8
CYStek Product Specification


Part Number MTBA5A10Q8
Description Dual N-Channel Enhancement Mode Power MOSFET
Maker CYStech
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