• Part: MTBA6C12J4
  • Description: N & P-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: CYStech
  • Size: 365.70 KB
Download MTBA6C12J4 Datasheet PDF
CYStech
MTBA6C12J4
Features RDSON(typ.) @VGS=(-)4.5V - Low Gate Charge - Simple Drive Requirement - Ro HS pliant & Halogen-free package N-CH 120V 2A 176 mΩ 183 mΩ P-CH -120V -1.6A 246 mΩ 276 mΩ Equivalent Circuit Outline TO-252-4L G:Gate D:Drain S:Source Absolute Maximum Ratings (TA=25°C, unless otherwise noted) Parameter Symbol Limits N-channel P-channel Drain-Source Voltage VDS 120 -120 Gate-Source Voltage VGS ±20 ±20 Continuous Drain Current @ TC=25°C, VGS=10V(-10V) (Note1) 8.0 -6.8 Continuous Drain Current @ TC=100°C, VGS=10V(-10V) (Note1) Continuous Drain Current @ TA=25°C, VGS=10V(-10V) (Note4) 5.6 2.0 -4.8 -1.6 Continuous Drain Current @ TA=70°C, VGS=10V(-10V) (Note4) 1.6 -1.3 Pulsed Drain Current - 1 (Note3) IDM -8 Total Power Dissipation (TC=25℃) Total Power Dissipation (TC=100℃) (Note1) (Note1) 25...