MTBA6C12H8
MTBA6C12H8 is N- and P-channel enhancement mode power MOSFET manufactured by Cystech Electonics.
CYStech Electronics Corp.
Spec. No. : C973H8 Issued Date : 2016.07.06 Revised Date : Page No. : 1/13
N- AND P-Channel Enhancement Mode MOSFET
Features
- Simple drive requirement
- Low on-resistance
- Fast switching speed
- Pb-free lead plating and halogen-free package
BVDSS ID@VGS=10V(-10V), TA=25°C ID@VGS=10V(-10V), TC=25°C RDSON(typ)@VGS=10V(-10V)
RDSON(typ)@VGS=4.5V(-4.5V)
N-CH 120V 2.2A
6.3A 186mΩ 196mΩ
P-CH -120V -1.9A
-5.4A 255mΩ 285mΩ
Equivalent Circuit
Outline
Pin 1
DFN5×6
G：Gate S：Source D：Drain
Ordering Information
Device MTBA6C12H8-0-T6-G
Package
DFN 5 ×6
(Pb-free lead plating & halogen-free package)
Shipping 3000 pcs / Tape & Reel
Environment...
