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MTBA0N10KJ3 - N-Channel Enhancement Mode MOSFET

Key Features

  • Low On Resistance.
  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • ESD Protected Gate.
  • Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=8.8A RDS(ON)@VGS=4.5V, ID=8.8A RDS(ON)@VGS=4V, ID=8.8A 100V 13.4A 3.7A 82 mΩ(typ) 89 mΩ(typ) 92 mΩ(typ) Symbol MTBA0N10KJ3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTBA0N10KJ.

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Datasheet Details

Part number MTBA0N10KJ3
Manufacturer Cystech Electonics
File Size 442.38 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet MTBA0N10KJ3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTBA0N10KJ3 Spec. No. : C139J3 Issued Date : 2015.09.30 Revised Date : Page No. : 1/ 9 Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • ESD Protected Gate • Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=8.8A RDS(ON)@VGS=4.5V, ID=8.8A RDS(ON)@VGS=4V, ID=8.8A 100V 13.4A 3.