Datasheet4U Logo Datasheet4U.com

MTB011N10RQ8 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Single Drive Requirement.
  • Low On-resistance.
  • Fast Switching Characteristic.
  • Repetitive Avalanche Rated.
  • Pb-free & Halogen-free package BVDSS ID @ TA=25°C, VGS=10V ID @ TA=70°C, VGS=10V RDS(ON)@VGS=10V, ID=11.5A RDS(ON)@VGS=4.5V, ID=9.5A 100V 10.7A 8.6A 7.5 mΩ(typ) 9.8 mΩ(typ) Symbol MTB011N10RQ8 Outline DD SOP-8 DD G：Gate D：Drain S：Source Pin 1 G SSS Ordering Information Device MTB011N10RQ8-0-T3-G Package Shipping SOP-8 (RoHS compliant &.

📥 Download Datasheet

Datasheet Details

Part number MTB011N10RQ8
Manufacturer Cystech Electonics
File Size 428.54 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB011N10RQ8 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MTB011 High Output Interface Driver ICs Shindengen Electric
MTB010A03H8 Dual N-Channel Enhancement Mode Power MOSFET CYStech
MTB010A06RH8 Dual N-Channel Enhancement Mode Power MOSFET CYStech
MTB010N06I3 N-Channel Enhancement Mode Power MOSFET CYStech Electronics
MTB010N06RH8 N-Channel Enhancement Mode Power MOSFET CYStech

Other Datasheets by Cystech Electonics

Part Number Description
MTB012N04J3 N-Channel Enhancement Mode Power MOSFET
MTB012N04Q8 N-Channel Enhancement Mode Power MOSFET
MTB012N10RQ8 N-Channel Enhancement Mode Power MOSFET
MTB013N10RE3 N-Channel Enhancement Mode Power MOSFET
MTB013N10RJ3 N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTB011N10RQ8 Spec. No. : C169Q8 Issued Date : 2016.11.04 Revised Date : Page No. : 1/9 Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Repetitive Avalanche Rated • Pb-free & Halogen-free package BVDSS ID @ TA=25°C, VGS=10V ID @ TA=70°C, VGS=10V RDS(ON)@VGS=10V, ID=11.5A RDS(ON)@VGS=4.5V, ID=9.5A 100V 10.7A 8.6A 7.5 mΩ(typ) 9.