Datasheet Summary
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
Spec. No. : C056E3 Issued Date : 2016.11.01 Revised Date : Page No. : 1/ 8
Features
- Low On Resistance
- Simple Drive Requirement
- Low Gate Charge
- Fast Switching Characteristic
- RoHS pliant package
BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=20A
RDS(ON)@VGS=4.5V, ID=20A
100V 53A
9.6A 11.8 mΩ(typ) 13.4 mΩ(typ)
Symbol
Outline
TO-220
G：Gate D：Drain S：Source
Ordering Information
Device
Package
Shipping
MTB013N10RE3-0-UB-X
TO-220 (Pb-free lead plating package)
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS pliant...