Part MTB013N10RE3
Description N-Channel Enhancement Mode Power MOSFET
Category MOSFET
Manufacturer Cystech Electonics
Size 347.15 KB
Cystech Electonics
MTB013N10RE3

Overview

  • Low On Resistance
  • Simple Drive Requirement
  • Low Gate Charge
  • Fast Switching Characteristic
  • RoHS compliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=20A 100V 53A
  • 6A 11.8 mΩ(typ) 13.4 mΩ(typ) Symbol