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MTB013N10RE3 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Low On Resistance.
  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • RoHS compliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=20A 100V 53A 9.6A 11.8 mΩ(typ) 13.4 mΩ(typ) Symbol MTB013N10RE3 Outline TO-220 G：Gate D：Drain S：Source GDS Ordering Information Device Package Shipping MTB013N10RE3-0-UB-X TO-220 (Pb-free lead plating package) 50 pcs/tube, 20 tubes/bo.

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Datasheet Details

Part number MTB013N10RE3
Manufacturer Cystech Electonics
File Size 347.15 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB013N10RE3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTB013N10RE3 Spec. No. : C056E3 Issued Date : 2016.11.01 Revised Date : Page No. : 1/ 8 Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=20A 100V 53A 9.6A 11.8 mΩ(typ) 13.