Datasheet4U Logo Datasheet4U.com

MTB013N10RJ3 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Low On Resistance.
  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=15A RDS(ON)@VGS=4.5V, ID=10A 100V 42A 9A 12.5mΩ(typ) 14.5 mΩ(typ) Symbol MTB013N10RJ3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTB013N10RJ3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free p.

📥 Download Datasheet

Datasheet Details

Part number MTB013N10RJ3
Manufacturer Cystech Electonics
File Size 363.80 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB013N10RJ3 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MTB013N10RH8 N-Channel Enhancement Mode Power MOSFET CYStech Electronics
MTB013N10RQ8 N-Channel Enhancement Mode Power MOSFET CYStech Electronics
MTB010A03H8 Dual N-Channel Enhancement Mode Power MOSFET CYStech
MTB010A06RH8 Dual N-Channel Enhancement Mode Power MOSFET CYStech
MTB010N06I3 N-Channel Enhancement Mode Power MOSFET CYStech Electronics

Other Datasheets by Cystech Electonics

Part Number Description
MTB013N10RE3 N-Channel Enhancement Mode Power MOSFET
MTB011N10RQ8 N-Channel Enhancement Mode Power MOSFET
MTB012N04J3 N-Channel Enhancement Mode Power MOSFET
MTB012N04Q8 N-Channel Enhancement Mode Power MOSFET
MTB012N10RQ8 N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTB013N10RJ3 Spec. No. : C056J3 Issued Date : 2016.11.02 Revised Date : Page No. : 1/ 9 Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=15A RDS(ON)@VGS=4.5V, ID=10A 100V 42A 9A 12.5mΩ(typ) 14.