* RDSON@VGS=4.5V, ID=5A
* Low Gate Charge
* Simple Drive Requirement
* Pb-free lead plating & Halogen-free package 100V 5A 129mΩ (typ.) 134mΩ (typ.) 136mΩ (typ.) Equivalent Circuit MTBB5N10L3 G：Gate D：Drain S：Source Outline SOT-223 D S D G Ordering Information Device MTBB
MTBB5N10L3 Datasheet (432.24 KB)
MTBB5N10L3
CYStech
432.24 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp. Spec. No. : C593L3 Issued Date : 2010.07.07 Revised Date : 2018.02.09 Page No. : 1/8 N -Channel Logic Level Enhancement Mo.
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