900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






CYStech

MTBB5N10L3 Datasheet Preview

MTBB5N10L3 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C593L3
Issued Date : 2010.07.07
Revised Date : 2018.02.09
Page No. : 1/8
N -Channel Logic Level Enhancement Mode MOSFET
MTBB5N10L3
BVDSS
ID @ VGS=10V, TC=25°C
RDSON@VGS=10V, ID=5A
RDSON@VGS=5V, ID=5A
Features
RDSON@VGS=4.5V, ID=5A
Low Gate Charge
Simple Drive Requirement
Pb-free lead plating & Halogen-free package
100V
5A
129mΩ (typ.)
134mΩ (typ.)
136mΩ (typ.)
Equivalent Circuit
MTBB5N10L3
GGate DDrain
SSource
Outline
SOT-223
D
S
D
G
Ordering Information
Device
MTBB5N10L3-0-T3-G
Package
SOT-223
(Pb-free lead plating & Halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTBB5N10L3
Preliminary
CYStek Product Specification




CYStech

MTBB5N10L3 Datasheet Preview

MTBB5N10L3 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=5V
Continuous Drain Current @ TC=100°C, VGS=5V
Pulsed Drain Current *1
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=5A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH *2
Total Power Dissipation @TC=25
Total Power Dissipation @TC=100
Operating Junction and Storage Temperature Range
Note : *1. Pulse width limited by maximum junction temperature
*2. Duty cycle 1%
Symbol
VDS
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
Spec. No. : C593L3
Issued Date : 2010.07.07
Revised Date : 2018.02.09
Page No. : 2/8
Limits
100
±20
5
3
20
5
1.25
0.625
7.5
3
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Note : When mounted on a 1 in2 pad of 2 oz. copper.
Symbol
Rth,j-c
Rth,j-a
Value
16.7
100 (Note)
Unit
°C/W
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
100 -
1 1.5
-
2
V
VGS=0V, ID=250μA
VDS =VGS, ID=250μA
GFS *1
-
4
- S VDS =5V, ID=2A
IGSS
-
-
±100
nA VGS=±20V, VDS=0V
IDSS
-
-
-
-
1
25
μA
VDS =80V, VGS =0V
VDS =70V, VGS =0V, Tj=125°C
- 129 155
VGS =10V, ID=5A
RDS(ON) *1
-
134 170 mΩ VGS =5V, ID=5A
- 136 190
VGS =4.5V, ID=5A
Dynamic
Qg *1, 2
- 20 30
Qgs *1, 2 - 4 6 nC VDS=50V, VGS=10V, ID=2A
Qgd *1, 2 - 5 8
td(ON) *1, 2 - 20 30
tr *1, 2
td(OFF) *1, 2
-
-
40
36
60
54
ns
VDS=50V, ID=1A, VGS=10V,
RG=6Ω
tf *1, 2 - 30 45
MTBB5N10L3
Preliminary
CYStek Product Specification


Part Number MTBB5N10L3
Description N-Channel Enhancement Mode Power MOSFET
Maker CYStech
PDF Download

MTBB5N10L3 Datasheet PDF






Similar Datasheet

1 MTBB5N10L3 N-Channel Enhancement Mode Power MOSFET
CYStech





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy