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MTBB5N10L3 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • RDSON@VGS=4.5V, ID=5A.
  • Low Gate Charge.
  • Simple Drive Requirement.
  • Pb-free lead plating & Halogen-free package 100V 5A 129mΩ (typ. ) 134mΩ (typ. ) 136mΩ (typ. ) Equivalent Circuit MTBB5N10L3 G：Gate D：Drain S：Source Outline SOT-223 D S D G Ordering Information Device MTBB5N10L3-0-T3-G Package SOT-223 (Pb-free lead plating & Halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and gree.

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Datasheet Details

Part number MTBB5N10L3
Manufacturer CYStech
File Size 432.24 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTBB5N10L3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C593L3 Issued Date : 2010.07.07 Revised Date : 2018.02.09 Page No. : 1/8 N -Channel Logic Level Enhancement Mode MOSFET MTBB5N10L3 BVDSS ID @ VGS=10V, TC=25°C RDSON@VGS=10V, ID=5A RDSON@VGS=5V, ID=5A Features RDSON@VGS=4.5V, ID=5A • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating & Halogen-free package 100V 5A 129mΩ (typ.) 134mΩ (typ.) 136mΩ (typ.