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CYStech

MTD5D0P03J3 Datasheet Preview

MTD5D0P03J3 Datasheet

P-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
P-Channel Enhancement Mode Power MOSFET
MTD5D0P03J3
Spec. No. : C965J3
Issued Date : 2018.04.13
Revised Date : 2018.05.04
Page No. : 1/9
Features
Low Gate Charge
Simple Drive Requirement
Pb-free lead plating & Halogen-free package
BVDSS
ID@ VGS=-10V, TC=25°C
RDSON@VGS=-10V, ID=-25A
RDSON@VGS=-6V, ID=-10A
-30V
-102A(silicon limit)
3.9mΩ(typ.)
5.6mΩ(typ.)
Equivalent Circuit
MTD5D0P03J3
Outline
TO-252(DPAK)
GGate DDrain SSource
G DS
Ordering Information
Device
Package
MTD5D0P03J3-0-T3-G
TO-252
(Pb-free lead plating & Halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTD5D0P03J3
CYStek Product Specification




CYStech

MTD5D0P03J3 Datasheet Preview

MTD5D0P03J3 Datasheet

P-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C965J3
Issued Date : 2018.04.13
Revised Date : 2018.05.04
Page No. : 2/9
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Limits
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=-10V, TC=25°C (silicon limit)
Continuous Drain Current @ VGS=-10V, TC=25°C (package limit)
Continuous Drain Current @ VGS=-10V, TC=100°C
Pulsed Drain Current
(Note 1)
Avalanche Current @ L=0.1mH
Avalanche Energy @ L=0.5mH, ID=-30A, VDD=-15V
(Note 2)
Total Power Dissipation @TC=25
Total Power Dissipation @TC=100
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
-30
±25
-102
-56
-48
-350
-80
225
96
38.4
-55~+150
Note : *1. Pulse width limited by maximum junction temperature
*2. 100% UIS testing in condition of VD=-15V, L=0.5mH, VG=-10V, ID=-26A, Rated VDS=-30V P-Channel
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
RθJC
RθJA
1.3
50 (Note)
110
°C/W
Note : The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment
with TA=25°C.
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
GFS *1
IGSS
IDSS
RDS(ON) *1
Dynamic
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
td(ON) *1, 2
tr *1, 2
td(OFF) *1, 2
tf *1, 2
-30
-1.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-3
V
VGS=0V, ID=-250μA
VDS =VGS, ID=-250μA
32.2 -
S VDS =-10V, ID=-20A
-
±100
nA VGS=±25V, VDS=0V
-
-
-1
-10
μA
VDS =-24V, VGS =0V
VDS =-24V, VGS =0V, Tj=125°C
3.9
5.6
5.5
12
mΩ
VGS =-10V, ID=-25A
VGS =-6V, ID=-10A
91 -
23.3 - nC VDS=-15V, VGS=-10V, ID=-25A
23.6 -
30 -
24.2
88.2
-
-
ns
VDS=-15V, ID=-25A, VGS=-10V,
RG=1Ω
26.2 -
MTD5D0P03J3
CYStek Product Specification


Part Number MTD5D0P03J3
Description P-Channel Enhancement Mode Power MOSFET
Maker CYStech
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