Datasheet4U Logo Datasheet4U.com

MTD5D0P03J3 - P-Channel Enhancement Mode Power MOSFET

Features

  • Low Gate Charge.
  • Simple Drive Requirement.
  • Pb-free lead plating & Halogen-free package BVDSS ID@ VGS=-10V, TC=25°C RDSON@VGS=-10V, ID=-25A RDSON@VGS=-6V, ID=-10A -30V -102A(silicon limit) 3.9mΩ(typ. ) 5.6mΩ(typ. ) Equivalent Circuit MTD5D0P03J3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device Package MTD5D0P03J3-0-T3-G TO-252 (Pb-free lead plating & Halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grad.

📥 Download Datasheet

Datasheet Details

Part number MTD5D0P03J3
Manufacturer CYStech
File Size 486.40 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTD5D0P03J3 Datasheet

📁 Similar Datasheet

  • MTD5010M - Ultra High Speed Photo Diode (Marktech Corporate)
  • MTD502E - 2 Port 10M/100M Switch (Myson)
  • MTD505 - 5 Port 10M/100M Ethernet Switch (Myson)
  • MTD508 - 8-port Switch (Myson Technology)
  • MTD516 - 16 Port 10M/100M Ethernet Switch (Myson)
  • MTD5N05 - (MTD5N05 / MTD5N06) Power Field Effect Transistors (Motorola)
  • MTD5N06 - (MTD5N05 / MTD5N06) Power Field Effect Transistors (Motorola)
  • MTD5N25E - Power MOSFET (ON Semiconductor)
  • MTD5N25E - TMOS POWER FET (Motorola)
  • MTD5P06E - TMOS POWER FET (Motorola)
Other Datasheets by CYStech

Full PDF Text Transcription

Click to expand full text
CYStech Electronics Corp. P-Channel Enhancement Mode Power MOSFET MTD5D0P03J3 Spec. No. : C965J3 Issued Date : 2018.04.13 Revised Date : 2018.05.04 Page No. : 1/9 Features • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating & Halogen-free package BVDSS ID@ VGS=-10V, TC=25°C RDSON@VGS=-10V, ID=-25A RDSON@VGS=-6V, ID=-10A -30V -102A(silicon limit) 3.9mΩ(typ.) 5.6mΩ(typ.
Published: |