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MTD5D0C03J4 - N- & P-Channel Logic Level Enhancement Mode Power MOSFET

Key Features

  • RDSON(typ. ) @VGS=(-)10V.
  • Low Gate Charge RDSON(typ. ) @VGS=+4.5V(-5V).
  • Simple Drive Requirement.
  • RoHS compliant & Halogen-free package N-CH 30V 8.6A 33.5A 7.7 mΩ 9.6 mΩ P-CH -30V -6.0A -23.0A 17.7mΩ 27.1 mΩ Equivalent Circuit MTD5D0C03J4 Outline TO-252-4L Tab D1/D2 G：Gate D：Drain S：Source S1G1 S2G2 Absolute Maximum Ratings (TA=25°C, unless otherwise noted) Parameter Symbol Limits N-channel P-channel Drain-Source Voltage VDS 30 -30 Gate-Source Voltage.

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Datasheet Details

Part number MTD5D0C03J4
Manufacturer CYStech
File Size 540.40 KB
Description N- & P-Channel Logic Level Enhancement Mode Power MOSFET
Datasheet download datasheet MTD5D0C03J4 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C704J4 Issued Date : 2017.08.28 Revised Date : 2017.12.06 Page No. : 1/13 N & P-Channel Enhancement Mode Power MOSFET MTD5D0C03J4 BVDSS ID @ VGS=10V(-10V), TA=25°C ID @ VGS=10V(-10V), TC=25°C Features RDSON(typ.) @VGS=(-)10V • Low Gate Charge RDSON(typ.) @VGS=+4.5V(-5V) • Simple Drive Requirement • RoHS compliant & Halogen-free package N-CH 30V 8.6A 33.5A 7.7 mΩ 9.6 mΩ P-CH -30V -6.0A -23.0A 17.7mΩ 27.1 mΩ Equivalent Circuit MTD5D0C03J4 Outline TO-252-4L Tab D1/D2 G：Gate D：Drain S：Source S1G1 S2G2 Absolute Maximum Ratings (TA=25°C, unless otherwise noted) Parameter Symbol Limits N-channel P-channel Drain-Source Voltage VDS 30 -30 Gate-Source Voltage VGS ±20 ±20 Continuous Drain Current @ TC=25°C, VGS=10V(-10V) (Note1) 33.