Datasheet4U Logo Datasheet4U.com

MTD5D0P03J3 - P-Channel Enhancement Mode Power MOSFET

Key Features

  • Low Gate Charge.
  • Simple Drive Requirement.
  • Pb-free lead plating & Halogen-free package BVDSS ID@ VGS=-10V, TC=25°C RDSON@VGS=-10V, ID=-25A RDSON@VGS=-6V, ID=-10A -30V -102A(silicon limit) 3.9mΩ(typ. ) 5.6mΩ(typ. ) Equivalent Circuit MTD5D0P03J3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device Package MTD5D0P03J3-0-T3-G TO-252 (Pb-free lead plating & Halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grad.

📥 Download Datasheet

Datasheet Details

Part number MTD5D0P03J3
Manufacturer CYStech
File Size 486.40 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTD5D0P03J3 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MTD5010M Ultra High Speed Photo Diode Marktech Corporate
MTD502E 2 Port 10M/100M Switch Myson
MTD505 5 Port 10M/100M Ethernet Switch Myson
MTD508 8-port Switch Myson Technology
MTD516 16 Port 10M/100M Ethernet Switch Myson

Other Datasheets by CYStech

Part Number Description
MTD5D0P03H8 P-Channel Enhancement Mode Power MOSFET
MTD5D0C03J4 N- & P-Channel Logic Level Enhancement Mode Power MOSFET
MTD55N10J3 N-Channel Logic Level Enhancement Mode Power MOSFET
MTD55N10Q8 N-Channel Logic Level Enhancement Mode Power MOSFET
MTD140P15J3 P-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CYStech Electronics Corp. P-Channel Enhancement Mode Power MOSFET MTD5D0P03J3 Spec. No. : C965J3 Issued Date : 2018.04.13 Revised Date : 2018.05.04 Page No. : 1/9 Features • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating & Halogen-free package BVDSS ID@ VGS=-10V, TC=25°C RDSON@VGS=-10V, ID=-25A RDSON@VGS=-6V, ID=-10A -30V -102A(silicon limit) 3.9mΩ(typ.) 5.6mΩ(typ.