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MTDN1034C6 - N-CHANNEL MOSFET

Features

  • High speed switching.
  • Low-voltage drive(1.5V).
  • Easily designed drive circuits.
  • Easy to use in parallel.
  • Pb-free package RDSON(TYP) VGS=4.5V, ID=200mA VGS=2.5V, ID=175mA VGS=1.8V, ID=150mA VGS=1.5V, ID=40mA 30V 0.3A 0.85Ω 1.23Ω 1.8Ω 2.3Ω Equivalent Circuit MTDN1034C6 Outline SOT-563 D1 G2 S2 Tr1 Tr2 S1 G1 D2 The following characteristics apply to both Tr1 and Tr2 Absolute Maximum Ratings (Ta=25°C, unless otherwise specified) Parameter Symbo.

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Datasheet Details

Part number MTDN1034C6
Manufacturer CYStech
File Size 269.49 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet MTDN1034C6 Datasheet
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Full PDF Text Transcription

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CYStech Electronics Corp. Spec. No. : C833C6 Issued Date : 2012.08.07 Revised Date : 2013.08.27 Page No. : 1/ 8 N-CHANNEL MOSFET (dual transistors) MTDN1034C6 BVDSS ID Features • High speed switching • Low-voltage drive(1.5V) • Easily designed drive circuits • Easy to use in parallel • Pb-free package RDSON(TYP) VGS=4.5V, ID=200mA VGS=2.5V, ID=175mA VGS=1.8V, ID=150mA VGS=1.5V, ID=40mA 30V 0.3A 0.85Ω 1.23Ω 1.8Ω 2.3Ω Equivalent Circuit MTDN1034C6 Outline SOT-563 D1 G2 S2 Tr1 Tr2 S1 G1 D2 The following characteristics apply to both Tr1 and Tr2 Absolute Maximum Ratings (Ta=25°C, unless otherwise specified) Parameter Symbol Limits Drain-Source Voltage VDSS 30 Gate-Source Voltage VGSS ±8 Continuous Drain Current @ VGS=4.5V, TA=25°C Continuous Drain Current @ VGS=4.
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