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CYStech Electronics Corp.
N-CHANNEL MOSFET (dual transistors)
MTDN3018S6R
Spec. No. : C320S6R Issued Date : 2007.12.23 Revised Date :2008.01.25 Page No. : 1/ 7
Features
• Low on-resistance • High ESD capability • High speed switching • Low-voltage drive(4V) • Easily designed drive circuits • Easy to use in parallel • Pb-free package
Equivalent Circuit
MTDN3018S6R
Outline
SOT-363R
Tr1 Tr2
The following characteristics apply to both Tr1 and Tr2
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage Gate-Source Voltage
Drain Current
Drain Reverse Current
Power Dissipation
ESD susceptibility
Junction Temperature Storage Temperature
Continuous Pulsed Continuous Pulsed
Symbol
VDSS
VGSS ID IDP IDR IDRP Pd
Tj Tstg
Note : 1. Pulse test, pulse width≤300μs, duty≤2%
2.
MTDN3018S6R Datasheet
