MTDN1034C6 - N-CHANNEL MOSFET

CYStech

Key Features

High speed switching.
Low-voltage drive(1.5V).
Easily designed drive circuits.
Easy to use in parallel.
Pb-free package RDSON(TYP) VGS=4.5V, ID=200mA VGS=2.5V, ID=175mA VGS=1.8V, ID=150mA VGS=1.5V, ID=40mA 30V 0.3A 0.85Ω 1.23Ω 1.8Ω 2.3Ω Equivalent Circuit MTDN1034C6 Outline SOT-563 D1 G2 S2 Tr1 Tr2 S1 G1 D2 The following characteristics apply to both Tr1 and Tr2 Absolute Maximum Ratings (Ta=25°C, unless otherwise specified) Parameter Symbo.

MTDN1034C6 n-channel mosfet by CYStech - Datasheet Preview

Datasheet Details

Part number	MTDN1034C6
Manufacturer	CYStech
File Size	269.49 KB
Description	N-CHANNEL MOSFET
Datasheet	MTDN1034C6 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
MTD-0208N	Tunnel Diode Detectors	Aeroflex
MTD-0218N	Tunnel Diode Detectors	Aeroflex
MTD-0818N	Tunnel Diode Detectors	Aeroflex
MTD-1002N	Tunnel Diode Detectors	Aeroflex
MTD-160	PHASE CONTROL THYRISTOR	ELECTROVIPRYAMITEL

Other Datasheets by CYStech

Part Number	Description
MTDN138ZS6R	N-CHANNEL MOSFET
MTDN3018S6R	N-CHANNEL MOSFET
MTDN3154C6	N-CHANNEL MOSFET
MTDN4224Q8	Dual N-Channel Enhancement Mode Power MOSFET
MTDN4228Q8	Dual N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

CYStech Electronics Corp. Spec. No. : C833C6 Issued Date : 2012.08.07 Revised Date : 2013.08.27 Page No. : 1/ 8 N-CHANNEL MOSFET (dual transistors) MTDN1034C6 BVDSS ID Features • High speed switching • Low-voltage drive(1.5V) • Easily designed drive circuits • Easy to use in parallel • Pb-free package RDSON(TYP) VGS=4.5V, ID=200mA VGS=2.5V, ID=175mA VGS=1.8V, ID=150mA VGS=1.5V, ID=40mA 30V 0.3A 0.85Ω 1.23Ω 1.8Ω 2.3Ω Equivalent Circuit MTDN1034C6 Outline SOT-563 D1 G2 S2 Tr1 Tr2 S1 G1 D2 The following characteristics apply to both Tr1 and Tr2 Absolute Maximum Ratings (Ta=25°C, unless otherwise specified) Parameter Symbol Limits Drain-Source Voltage VDSS 30 Gate-Source Voltage VGSS ±8 Continuous Drain Current @ VGS=4.5V, TA=25°C Continuous Drain Current @ VGS=4.