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MTDN3018S6R - N-CHANNEL MOSFET

Features

  • Low on-resistance.
  • High ESD capability.
  • High speed switching.
  • Low-voltage drive(4V).
  • Easily designed drive circuits.
  • Easy to use in parallel.
  • Pb-free package Equivalent Circuit MTDN3018S6R Outline SOT-363R Tr1 Tr2 The following characteristics apply to both Tr1 and Tr2 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Drain Reverse Current Power Dissipation ESD susceptibility Ju.

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Datasheet preview – MTDN3018S6R

Datasheet Details

Part number MTDN3018S6R
Manufacturer CYStech
File Size 221.18 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet MTDN3018S6R Datasheet
Additional preview pages of the MTDN3018S6R datasheet.

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Full PDF Text Transcription

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CYStech Electronics Corp. N-CHANNEL MOSFET (dual transistors) MTDN3018S6R Spec. No. : C320S6R Issued Date : 2007.12.23 Revised Date :2008.01.25 Page No. : 1/ 7 Features • Low on-resistance • High ESD capability • High speed switching • Low-voltage drive(4V) • Easily designed drive circuits • Easy to use in parallel • Pb-free package Equivalent Circuit MTDN3018S6R Outline SOT-363R Tr1 Tr2 The following characteristics apply to both Tr1 and Tr2 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Drain Reverse Current Power Dissipation ESD susceptibility Junction Temperature Storage Temperature Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP IDR IDRP Pd Tj Tstg Note : 1. Pulse test, pulse width≤300μs, duty≤2% 2.
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