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CYStech

MTN12N60DFP Datasheet Preview

MTN12N60DFP Datasheet

N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C076FP
Issued Date : 2016.02.04
Revised Date :
Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTN12N60DFP
BVDSS
ID @ VGS=10V, TC=25°C
RDSON(TYP) @ VGS=10V, ID=6A
600V
12A
0.47Ω
Description
The MTN12N60DFP is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220FP package is universally preferred for all commercial-industrial applications
Features
Low On Resistance
Simple Drive Requirement
Low Gate Charge
Fast Switching Characteristic
RoHS compliant package
Applications
Ballast
Inverter
Ordering Information
Device
MTN12N60DFP-0-UB-S
Package
TO-220FP
(RoHS compliant package)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTN12N60DFP
CYStek Product Specification




CYStech

MTN12N60DFP Datasheet Preview

MTN12N60DFP Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C076FP
Issued Date : 2016.02.04
Revised Date :
Page No. : 2/9
Symbol
Outline
MTN12N60DFP
TO-220FP
GGate DDrain SSource
GDS
Absolute Maximum Ratings (TC=25°C)
Parameter
Drain-Source Voltage (Note 1)
Gate-Source Voltage
Continuous Drain Current @TC=100°C, VGS=10V
Continuous Drain Current @TC=100°C, VGS=10V
Pulsed Drain Current @ VGS=10V
(Note 2)
Avalanche Current
(Note 2)
Single Pulse Avalanche Energy@L=1mH, IAS=12A, VDD=50V
(Note 3)
Repetitive Avalanche Energy
(Note 2)
Maximum Temperature for Soldering @ Lead at 0.125 in(3.175mm)
from case for 10 seconds
Total Power Dissipation (TC=25)
Linear Derating Factor above 25
Operating Junction and Storage Temperature
* Drain current limited by maximum junction temperature.
Symbol
VDS
VGS
ID
IDM
IAS
EAS
EAR
TL
PD
Tj, Tstg
Limits
600
±30
12*
7.4*
48*
12
72
6.3
300
62.5
0.5
-55~+150
Note : 1. TJ=+25to +150.
2. Pulse width limited by maximum junction temperature.
3. 100% tested by conditions of IAS=6A, VDD=50V, L=1mH, VGS=10V, starting TJ=+25.
Unit
V
A
mJ
°C
W
W/°C
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
MTN12N60DFP
Symbol
Rth,j-c
Rth,j-a
Value
2.0
62.5
Unit
°C/W
CYStek Product Specification


Part Number MTN12N60DFP
Description N-Channel Enhancement Mode Power MOSFET
Maker CYStech
Total Page 9 Pages
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