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MTA9D0B03Q8 - Dual P-Channel Enhancement Mode Power MOSFET

Features

  • Simple drive requirement.
  • Low on-resistance.
  • Fast switching speed.
  • Dual P-ch MOSFET package.
  • Pb-free lead plating & halogen-free package BVDSS ID@VGS=-10V, TA=25 C RDSON(MAX)@VGS=-10V, ID=-12A RDSON(MAX)@VGS=-4.5V, ID=-10A RDSON(MAX)@VGS=-3V, ID=-5A -30V -10.5A 8.7mΩ(typ. ) 12.3mΩ(typ. ) 22.4mΩ(typ. ) Equivalent Circuit MTA9D0B03Q8 Outline SOP-8 G：Gate S：Source D：Drain Ordering Information Device MTA9D0B03Q8-0-T3-G Package SOP-8 (Pb-free lead p.

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Datasheet Details

Part number MTA9D0B03Q8
Manufacturer CYStech Electronics
File Size 561.83 KB
Description Dual P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTA9D0B03Q8 Datasheet

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Full PDF Text Transcription

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CYStech Electronics Corp. Dual P-Channel Enhancement Mode Power MOSFET MTA9D0B03Q8 Spec. No. : C050Q8 Issued Date : 2018.09.12 Revised Date : 2018.09.17 Page No. : 1/9 Features • Simple drive requirement • Low on-resistance • Fast switching speed • Dual P-ch MOSFET package • Pb-free lead plating & halogen-free package BVDSS ID@VGS=-10V, TA=25 C RDSON(MAX)@VGS=-10V, ID=-12A RDSON(MAX)@VGS=-4.5V, ID=-10A RDSON(MAX)@VGS=-3V, ID=-5A -30V -10.5A 8.7mΩ(typ.) 12.3mΩ(typ.) 22.4mΩ(typ.
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