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MTA028P01V8 - P-Channel Enhancement Mode Power MOSFET

Key Features

  • Simple drive requirement.
  • Low on-resistance.
  • Fast switching speed.
  • Pb-free lead plating package BVDSS ID@ TC=25C, VGS=-4.5V ID@ TA=25C, VGS=-4.5V RDSON @VGS=-4.5V, ID=-10A RDSON @VGS=-2.5V, ID=-7A RDSON @VGS=-1.8V, ID=-5A -14V -20.8A -6.5A 22mΩ(typ. ) 28mΩ(typ. ) 38 mΩ(typ. ) Equivalent Circuit MTA028P01V8 Outline DFN3×3 G：Gate S：Source D：Drain Pin 1 Ordering Information Device MTA028P01V8-0-T6-G Package Shipping DFN3×3 (Pb-free lead plating and ha.

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Datasheet Details

Part number MTA028P01V8
Manufacturer CYStech Electronics
File Size 671.43 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTA028P01V8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. P-Channel Enhancement Mode Power MOSFET MTA028P01V8 Spec. No. : C101V8 Issued Date : 2018.08.16 Revised Date : 2018.08.17 Page No. : 1/10 Features • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating package BVDSS ID@ TC=25C, VGS=-4.5V ID@ TA=25C, VGS=-4.5V RDSON @VGS=-4.5V, ID=-10A RDSON @VGS=-2.5V, ID=-7A RDSON @VGS=-1.8V, ID=-5A -14V -20.8A -6.5A 22mΩ(typ.) 28mΩ(typ.) 38 mΩ(typ.