MTA9D0B03Q8 - Dual P-Channel Enhancement Mode Power MOSFET

CYStech Electronics

Key Features

Simple drive requirement.
Low on-resistance.
Fast switching speed.
Dual P-ch MOSFET package.
Pb-free lead plating & halogen-free package BVDSS ID@VGS=-10V, TA=25 C RDSON(MAX)@VGS=-10V, ID=-12A RDSON(MAX)@VGS=-4.5V, ID=-10A RDSON(MAX)@VGS=-3V, ID=-5A -30V -10.5A 8.7mΩ(typ. ) 12.3mΩ(typ. ) 22.4mΩ(typ. ) Equivalent Circuit MTA9D0B03Q8 Outline SOP-8 G：Gate S：Source D：Drain Ordering Information Device MTA9D0B03Q8-0-T3-G Package SOP-8 (Pb-free lead p.

MTA9D0B03Q8 dual p-channel enhancement mode power mosfet by CYStech Electronics - Datasheet Preview

Datasheet Details

Part number	MTA9D0B03Q8
Manufacturer	CYStech Electronics
File Size	561.83 KB
Description	Dual P-Channel Enhancement Mode Power MOSFET
Datasheet	MTA9D0B03Q8 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
MTA9D0P03Q8	P-Channel MOSFET	CYStech
MTA9D0P03V8	P-Channel Enhancement Mode Power MOSFET	CYStech
MTA90	Thyristor Modules	Techsem
MTA9ASF1G72PZ	DDR4 SDRAM RDIMM	Micron
MTA9ASF51272PZ	DDR4 SDRAM RDIMM	Micron

Other Datasheets by CYStech Electronics

Part Number	Description
MTA025P02Q8	P-Channel Enhancement Mode Power MOSFET
MTA028P01V8	P-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

CYStech Electronics Corp. Dual P-Channel Enhancement Mode Power MOSFET MTA9D0B03Q8 Spec. No. : C050Q8 Issued Date : 2018.09.12 Revised Date : 2018.09.17 Page No. : 1/9 Features • Simple drive requirement • Low on-resistance • Fast switching speed • Dual P-ch MOSFET package • Pb-free lead plating & halogen-free package BVDSS ID@VGS=-10V, TA=25 C RDSON(MAX)@VGS=-10V, ID=-12A RDSON(MAX)@VGS=-4.5V, ID=-10A RDSON(MAX)@VGS=-3V, ID=-5A -30V -10.5A 8.7mΩ(typ.) 12.3mΩ(typ.) 22.4mΩ(typ.