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MTB013N10RQ8 - N-Channel Enhancement Mode Power MOSFET

Features

  • Single Drive Requirement.
  • Low On-resistance.
  • Fast Switching Characteristic.
  • Repetitive Avalanche Rated.
  • Pb-free & Halogen-free package BVDSS ID @ TA=25°C, VGS=10V RDS(ON)@VGS=10V, ID=10A RDS(ON)@VGS=4.5V, ID=8A 100V 10A 10.3 mΩ(typ) 12.3 mΩ(typ) Symbol MTB013N10RQ8 Outline DD SOP-8 DD G：Gate D：Drain S：Source Pin 1 G SSS Ordering Information Device MTB013N10RQ8-0-T3-G Package Shipping SOP-8 (RoHS compliant & Halogen-free package) 2500 pc.

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Datasheet preview – MTB013N10RQ8

Datasheet Details

Part number MTB013N10RQ8
Manufacturer CYStech Electronics
File Size 429.74 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB013N10RQ8 Datasheet
Additional preview pages of the MTB013N10RQ8 datasheet.

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Full PDF Text Transcription

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CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTB013N10RQ8 Spec. No. : C053Q8 Issued Date : 2016.08.26 Revised Date : 2016.08.29 Page No. : 1/9 Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Repetitive Avalanche Rated • Pb-free & Halogen-free package BVDSS ID @ TA=25°C, VGS=10V RDS(ON)@VGS=10V, ID=10A RDS(ON)@VGS=4.5V, ID=8A 100V 10A 10.3 mΩ(typ) 12.
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