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CYStech Electronics

MTB032P06V8 Datasheet Preview

MTB032P06V8 Datasheet

P-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C924V8
Issued Date : 2013.06.06
Revised Date :
Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
MTB032P06V8 BVDSS
ID
RDSON@VGS=10V, ID=-6A
RDSON@VGS=-4.5V, ID=-4A
-60V
-25A
29mΩ(typ)
33mΩ(typ)
Description
The MTB032P06V8 is a P-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
Features
Simple drive requirement
Low on-resistance
Fast switching speed
Pb-free lead plating and halogen-free package
Equivalent Circuit
MTB032P06V8
Outline
Pin 1
DFN3×3
GGate SSource DDrain
Ordering Information
Device
MTB032P06V8-0-T1-G
Package
DFN3×3
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
MTB032P06V8
CYStek Product Specification




CYStech Electronics

MTB032P06V8 Datasheet Preview

MTB032P06V8 Datasheet

P-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C924V8
Issued Date : 2013.06.06
Revised Date :
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=-10V
Continuous Drain Current @ TC=100°C, VGS=-10V
Continuous Drain Current @ TA=25°C, VGS=-10V
Continuous Drain Current @ TA=70°C, VGS=-10V
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=-10A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH
TC=25
Total Power Dissipation
TC=100
TA=25
TA=70
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
Limits
-60
±25
-25
-16
-6.6
-5.3
-40 *1
-10
5
2.5 *2
36
14
2.5 *3
1.6 *3
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Rth,j-c
3.5 °C/W
Thermal Resistance, Junction-to-ambient, max
Rth,j-a
50 *3
°C/W
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle1%
3. Surface mounted on 1 in² copper pad of FR-4 board, t10s ; 125°C/W when mounted on minimum copper pad.
Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit
Test Conditions
Static
BVDSS
VGS(th)
IGSS
IDSS
IDSS
RDS(ON) *1
GFS *1
-60 -
-
-0.8 -1.1 -2.5
V
VGS=0, ID=-250μA
VDS=VGS, ID=-250μA
-
-
±100
nA VGS=±25V, VDS=0
-
-
-
-
-1
-25
μA
VDS=-48V, VGS=0
VDS=-48V, VGS=0, Tj=125°C
-
-
29
33
38
45
mΩ
VGS=-10V, ID=-6A
VGS=-4.5V ID=-4A
- 18 - S VDS=-5V, ID=-6A
Dynamic
Ciss
Coss
Crss
- 2827 -
- 109 -
- 70 -
pF VDS=-30V, VGS=0, f=1MHz
MTB032P06V8
CYStek Product Specification


Part Number MTB032P06V8
Description P-Channel Enhancement Mode Power MOSFET
Maker CYStech Electronics
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