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MTB2D5N03BJ3 Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: CYStech Electronics

Overview: CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTB2D5N03BJ3 Spec. No. : C998J3 Issued Date : 2015.06.22 Revised Date : Page No.

Datasheet Details

Part number MTB2D5N03BJ3
Manufacturer CYStech Electronics
File Size 377.63 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet MTB2D5N03BJ3-CYStechElectronics.pdf

Key Features

  • Low On Resistance.
  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=20A 30V 60A 16.8A 2.8 mΩ(typ) 3.7 mΩ(typ) Symbol MTB2D5N03BJ3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTB2D5N03BJ3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free.

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