Datasheet Summary
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
Spec. No. : C998J3 Issued Date : 2015.06.22 Revised Date : Page No. : 1/ 9
Features
- Low On Resistance
- Simple Drive Requirement
- Low Gate Charge
- Fast Switching Characteristic
- Pb-free lead plating and halogen-free package
BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=20A
RDS(ON)@VGS=4.5V, ID=20A
30V 60A
16.8A 2.8 mΩ(typ) 3.7 mΩ(typ)
Symbol
Outline
TO-252(DPAK)
G：Gate D：Drain S：Source
G DS
Ordering Information
Device MTB2D5N03BJ3-0-T3-G
Package
TO-252 (Pb-free lead plating and halogen-free package)
Shipping 2500 pcs / tape& reel
Environment friendly grade : S...