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CYStech Electronics

MTBA6C15H8 Datasheet Preview

MTBA6C15H8 Datasheet

P- & N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C938H8
Issued Date : 2016.09.06
Revised Date : 2018.04.16
Page No. : 1/14
N- And P-Channel Enhancement Mode MOSFET
MTBA6C15H8 BVDSS
ID@VGS=10V(-10V), TA=25°C
ID@VGS=10V(-10V), TC=25°C
RDSON(typ)@VGS=10V(-10V)
RDSON(typ)@VGS=4.5V(-4.5V)
Features
Simple drive requirement
Low on-resistance
Fast switching speed
Pb-free lead plating and halogen-free package
N-CH
150V
2.4A
6.8A
172mΩ
178mΩ
P-CH
-150V
-2.0A
-5.8A
257mΩ
275mΩ
Equivalent Circuit
MTBA6C15H8
Outline
Pin 1
DFN5×6
Pin 1
GGate SSource DDrain
Ordering Information
Device
MTBA6C15H8-0-T6-G
Package
Shipping
DFN 5 ×6
(Pb-free lead plating & halogen-free package)
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTBA6C15H8
CYStek Product Specification




CYStech Electronics

MTBA6C15H8 Datasheet Preview

MTBA6C15H8 Datasheet

P- & N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C938H8
Issued Date : 2016.09.06
Revised Date : 2018.04.16
Page No. : 2/14
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Breakdown Voltage
Gate-Source Voltage
TA=25 °C, VGS=10V (-10V)
Continuous Drain Current TA=70 °C, VGS=10V (-10V)
TC=25 °C, VGS=10V (-10V)
TC=100 °C, VGS=10V (-10V)
Pulsed Drain Current (Note 1 & 2)
TA=25 °C
Power Dissipation
TA=70 °C
TC=25 °C
TC=100 °C
Operating Junction and Storage Temperature Range
Symbol
BVDSS
VGS
IDSM
ID
IDM
PDSM
PD
Tj; Tstg
Limits
N-channel P-channel
150 -150
±20 ±20
2.4 -2.0
1.9 -1.6
6.8 -5.8
4.3 -3.7
10 -8
2.5 (Note 3)
1.6 (Note 3)
21
8.4
-55~+150
Unit
V
A
W
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle1%
RθJC
RθJA
6
50 (Note 3)
°C/W
3. Surface mounted on 1 in² copper pad of FR-4 board; 125°C/W when mounted on minimum copper pad.
N-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit
Test Conditions
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
150
1.0
-
-
-
-
-
-
-
-
2.5
V
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
-
±100
nA VGS=±20V, VDS=0V
-
-
1
25
μA
VDS=120V, VGS=0V
VDS=120V, VGS=0V, Tj=125°C
172
178
220
235
mΩ
ID=2.5A, VGS=10V
ID=2A, VGS=4.5V
*GFS
- 6.3 - S VDS=10V, ID=2A
Dynamic
Ciss - 439 -
Coss
- 43 - pF VDS=25V, VGS=0V, f=1MHz
Crss - 26 -
*td(ON) - 6.4 -
*tr
*td(OFF)
-
-
16.4
44.8
-
-
ns VDS=75V, ID=2.5A, VGS=10V, RG=6Ω
*tf - 74 -
MTBA6C15H8
CYStek Product Specification


Part Number MTBA6C15H8
Description P- & N-Channel Enhancement Mode Power MOSFET
Maker CYStech Electronics
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