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MTBA6C15H8 - P- & N-Channel Enhancement Mode Power MOSFET

Key Features

  • Simple drive requirement.
  • Low on-resistance.
  • Fast switching speed.
  • Pb-free lead plating and halogen-free package N-CH 150V 2.4A 6.8A 172mΩ 178mΩ P-CH -150V -2.0A -5.8A 257mΩ 275mΩ Equivalent Circuit MTBA6C15H8 Outline Pin 1 DFN5×6 Pin 1 G：Gate S：Source D：Drain Ordering Information Device MTBA6C15H8-0-T6-G Package Shipping DFN 5 ×6 (Pb-free lead plating & halogen-free package) 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS complian.

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Datasheet Details

Part number MTBA6C15H8
Manufacturer CYStech Electronics
File Size 815.08 KB
Description P- & N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTBA6C15H8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C938H8 Issued Date : 2016.09.06 Revised Date : 2018.04.16 Page No. : 1/14 N- And P-Channel Enhancement Mode MOSFET MTBA6C15H8 BVDSS ID@VGS=10V(-10V), TA=25°C ID@VGS=10V(-10V), TC=25°C RDSON(typ)@VGS=10V(-10V) RDSON(typ)@VGS=4.5V(-4.5V) Features • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating and halogen-free package N-CH 150V 2.4A 6.8A 172mΩ 178mΩ P-CH -150V -2.0A -5.