MTBA6C15J4 Description
CYStech Electronics Corp. 2014.10.15 Revised Date : 1/13 N & P-Channel Enhancement Mode Power MOSFET MTBA6C15J4 BVDSS ID @VGS=10V(-10V), TA=25°C.
MTBA6C15J4 Key Features
- Low gate charge
- Simple drive requirement
- Pb-free lead plating and halogen-free package