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MTBA6C15J4 - N & P-Channel Enhancement Mode Power MOSFET

Key Features

  • Low gate charge.
  • Simple drive requirement.
  • Pb-free lead plating and halogen-free package ID @VGS=10V(-10V), TC=25°C RDSON(TYP)@VGS=10V(-10V) RDSON(TYP)@VGS=4.5V(-4.5V) N-CH 150V 2A 9.3A 167mΩ 172mΩ P-CH -150V -1.5A -7.1A 253mΩ 273mΩ Equivalent Circuit MTBA6C15J4 Outline TO-252-4L G：Gate D：Drain S：Source Absolute Maximum Ratings (TA=25°C, unless otherwise noted) Parameter Symbol Limits N-channel P-channel Drain-Source Voltage VDS 150 -150 Gate-Source Volt.

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Datasheet Details

Part number MTBA6C15J4
Manufacturer CYStech
File Size 403.30 KB
Description N & P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTBA6C15J4 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C938J4 Issued Date : 2014.10.15 Revised Date : 2017.07.25 Page No. : 1/13 N & P-Channel Enhancement Mode Power MOSFET MTBA6C15J4 BVDSS ID @VGS=10V(-10V), TA=25°C Features • Low gate charge • Simple drive requirement • Pb-free lead plating and halogen-free package ID @VGS=10V(-10V), TC=25°C RDSON(TYP)@VGS=10V(-10V) RDSON(TYP)@VGS=4.5V(-4.5V) N-CH 150V 2A 9.3A 167mΩ 172mΩ P-CH -150V -1.5A -7.