Datasheet Summary
CYStech Electronics Corp.
Spec. No. : C938H8 Issued Date : 2016.09.06 Revised Date : 2018.04.16 Page No. : 1/14
N- And P-Channel Enhancement Mode MOSFET
MTBA6C15H8 BVDSS ID@VGS=10V(-10V), TA=25°C
ID@VGS=10V(-10V), TC=25°C
RDSON(typ)@VGS=10V(-10V)
RDSON(typ)@VGS=4.5V(-4.5V)
Features
- Simple drive requirement
- Low on-resistance
- Fast switching speed
- Pb-free lead plating and halogen-free package
N-CH 150V 2.4A
6.8A 172mΩ
178mΩ
P-CH -150V -2.0A
-5.8A 257mΩ
275mΩ
Equivalent Circuit
Outline
Pin 1
DFN5×6 Pin 1
G：Gate S：Source D：Drain
Ordering Information
Device MTBA6C15H8-0-T6-G
Package
Shipping
DFN 5 ×6
(Pb-free lead plating & halogen-free package)
3000 pcs / Tape &...