CYStech Electronics MTBA6C15H8
P- & N-Channel Enhancement Mode Power MOSFET
| Part No. | MTBA6C15H8 |
|---|---|
| Datasheet | MTBA6C15H8 Download |
| Manufacturer |  CYStech Electronics |
| Description | P- & N-Channel Enhancement Mode Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Simple drive requirement● Low on-resistance
● Fast switching speed
● Pb-free lead plating and halogen-free package N-CH 150V 2.4A 6.8A 172mΩ 178mΩ P-CH -150V -2.0A -5.8A 257mΩ 275mΩ Equivalent Circuit MTBA6C15H8 Outline Pin 1 DFN5×6 Pin 1 G：Gate S：Source D：Drain Ordering Information Device MTBA6C15H8-0-T6-G Package Shipping DFN 5 ×6 (Pb-free lead plating & halogen-free package) 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTBA6C15H8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C938H8 Issued Date : 2016.09.06 Revised Date : 2018.04.16 Page No. : 2/14
ABSOLUTE MAXIMUM RATINGS
(TC=25°C, unless otherwise noted) Parameter Drain-Source Breakdown Voltage Gate-Source Voltage TA=25 °C, VGS=10V (-10V) Continuous Drain Current TA=70 °C, VGS=10V (-10V) TC=25 °C, VGS=10V (-10V...
