Datasheet4U Logo Datasheet4U.com

MTE300P10KJ3 - P-Channel Enhancement Mode Power MOSFET

Key Features

  • Low Gate Charge.
  • Simple Drive Requirement.
  • ESD Protected Gate.
  • Pb-free Lead Plating & Halogen-free Package Equivalent Circuit MTE300P10KJ3 Outline TO-252(DPAK) G:Gate D:Drain S:Source G DS Ordering Information Device MTE300P10KJ3-0-T3-G Package TO-252 (Pb-free lead plating & halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec,.

📥 Download Datasheet

Datasheet Details

Part number MTE300P10KJ3
Manufacturer CYStech Electronics
File Size 444.18 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTE300P10KJ3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Spec. No. : C135J3 CYStech Electronics Corp. Issued Date : 2015.09.04 Revised Date : P-Channel Enhancement Mode Power MOSFET MTE300P10KJ3 BVDSS ID@VGS=-10V, TC=25°C RDS(ON)@VGS=-10V, ID=-5A -100V -6.