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MTE300P10KN3 Datasheet P-channel Enhancement Mode Power MOSFET

Manufacturer: CYStech Electronics

Overview: CYStech Electronics Corp. Spec. No. : C135N3 Issued Date : 2015.09.07 Revised Date : Page No.

Datasheet Details

Part number MTE300P10KN3
Manufacturer CYStech Electronics
File Size 417.85 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet MTE300P10KN3-CYStechElectronics.pdf

Key Features

  • Low gate charge.
  • Compact and low profile SOT-23 package.
  • Advanced trench process technology.
  • High density cell design for ultra low on resistance.
  • ESD Protected Gate.
  • Pb-free lead plating package BVDSS ID @ VGS=-10V, TA=25°C RDSON@VGS=-10V, ID=-1A -100V -1.2A 378mΩ(typ) Symbol MTE300P10KN3 Outline SOT-23 D G：Gate S：Source D：Drain GS Ordering Information Device MTE300P10KN3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free.

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