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MTE300P10KN3 - P-Channel Enhancement Mode Power MOSFET

Key Features

  • Low gate charge.
  • Compact and low profile SOT-23 package.
  • Advanced trench process technology.
  • High density cell design for ultra low on resistance.
  • ESD Protected Gate.
  • Pb-free lead plating package BVDSS ID @ VGS=-10V, TA=25°C RDSON@VGS=-10V, ID=-1A -100V -1.2A 378mΩ(typ) Symbol MTE300P10KN3 Outline SOT-23 D G：Gate S：Source D：Drain GS Ordering Information Device MTE300P10KN3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free.

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Datasheet Details

Part number MTE300P10KN3
Manufacturer CYStech Electronics
File Size 417.85 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTE300P10KN3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C135N3 Issued Date : 2015.09.07 Revised Date : Page No. : 1/9 -100V P-Channel Enhancement Mode MOSFET MTE300P10KN3 Features • Low gate charge • Compact and low profile SOT-23 package • Advanced trench process technology • High density cell design for ultra low on resistance • ESD Protected Gate • Pb-free lead plating package BVDSS ID @ VGS=-10V, TA=25°C RDSON@VGS=-10V, ID=-1A -100V -1.