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MTE300N20J3 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Low Gate Charge.
  • Simple Drive Requirement.
  • Pb-free lead plating and halogen-free package Equivalent Circuit MTE300N20J3 Outline TO-252(DPAK) G:Gate D:Drain S:Source G DS Ordering Information Device MTE300N20J3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel.

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Datasheet Details

Part number MTE300N20J3
Manufacturer CYStech Electronics
File Size 346.65 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTE300N20J3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C875J3 Issued Date : 2016.01.13 Revised Date : 2016.01.14 Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET MTE300N20J3 BVDSS ID@VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=3A 200V 8.