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MTE3D5N06F3 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Simple Drive Requirement.
  • Fast Switching Characteristic.
  • RoHS compliant package Symbol MTE3D5N06F3 Outline TO-263 G:Gate D:Drain S:Source G DS Ordering Information Device Package Shipping MTE3D5N06F3-0-T7-X TO-263 (Pb-free lead plating and RoHS compliant package) 800 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T7 : 800 pcs / tape & reel, 13” reel Product rank,.

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Datasheet Details

Part number MTE3D5N06F3
Manufacturer CYStech Electronics
File Size 311.76 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTE3D5N06F3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C912F3 Issued Date : 2016.10.05 Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTE3D5N06F3 BVDSS ID @VGS=10V, TC=25°C RDSON(TYP) @ VGS=10V, ID=30A RDSON(TYP) @ VGS=7V, ID=20A 60V 80A 3.6mΩ 3.