MTP2311N3 Datasheet | CYStech Electronics

Features - Low gate charge - pact and low profile SOT-23 package - Advanced trench process technology - High density cell design for ultra low on resistance - Pb-free lead plating package BVDSS ID RDSON@VGS=-10V, ID=-2A RDSON@VGS=-4.5V,ID=-1.7A -60V -3.5A 72mΩ(typ) 98mΩ(typ) Symbol Outline SOT-23 D G：Gate S：Source D：Drain Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C (Note 3) Continuous Drain Current @ TA=100°C (Note 3) Pulsed Drain Current (Notes 1, 2) Maximum Power Dissipation Linear Derating Factor (Note 3) Symbol VDS VGS ID IDM PD Tj ; Tstg Limits -60 ±20 -3.5 -2.2 -14 1.38 0.01 -55~+150 Unit V V A A A W W/°C °C Operating Junction and Storage Temperature Range Note : 1. Pulse width limited by maximum junction temperature. 2. Pulse width≤ 300μs, duty cycle≤2%. 3. Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad CYStek Product Specification http://.. CYStech Electronics Corp. Thermal Performance Parameter Thermal Resistance, Junction-to-Ambient(PCB mounted) Symbol Rth,ja Spec. No. : C733N3 Issued Date : 2011.12.27 Revised Date : Page No. : 2/8 Limit 90 Unit °C/W Note : Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad Electrical Characteristics (Tj=25°C, unless otherwise noted) Symbol Static BVDSS ∆BVDSS/∆Tj VGS(th) IGSS IDSS - RDS(ON) - GFS Dynamic Ciss Coss Crss td(ON) tr td(OFF) tf Qg Qgs Qgd Source-Drain Diode - IS - ISM - VSD Trr Qrr Min. -60 -1.0 Typ. 0.04 -1.8 72 98 5.8 962 56 40 5.9 5.7 19.2 6 11 3.4 3.4 12 7 Max. -3.0 ±100 -1 -25 90 120 -3.5 -14 -1.3 Unit V V/°C V n A μA mΩ S Test Conditions VGS=0, ID=-250μA Reference to 25°C, ID=-1m A VDS=VGS, ID=-250μA VGS=±20V, VDS=0 VDS=-48V, VGS=0 VDS=-48V, VGS=0 (Tj=70°C) ID=-2A, VGS=-10V ID=-1.7A, VGS=-4.5V VDS=-5V, ID=-3A p F VDS=-20V, VGS=0, f=1MHz VDS=-20V, ID=-1A, VGS=-10V RG=6Ω ns n C VDS=-30V, ID=-3.5A,...