Datasheet4U Logo Datasheet4U.com

NE3503M04 Datasheet - California Eastern Labs

C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER

NE3503M04 Features

* SUPER LOW NOISE FIGURE AND HIGH ASSOCIATED GAIN: NF = 0.55 dB TYP., Ga = 11.5 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz

* FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) PACKAGE:

* GATE WIDTH: Wg = 160 μm M04 PACKAGE APPLICATIONS

* DBS LNB gain-stage, Mix-stage

NE3503M04 Datasheet (625.47 KB)

Preview of NE3503M04 PDF

Datasheet Details

Part number:

NE3503M04

Manufacturer:

California Eastern Labs

File Size:

625.47 KB

Description:

C to ku band super low noise and high-gain amplifier.

📁 Related Datasheet

NE350184C HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (CEL)

NE3505M04 HETERO JUNCTION FIELD EFFECT TRANSISITOR (California Eastern Labs)

NE3508M04 HETERO JUNCTION FIELD EFFECT TRANSISITOR (California Eastern Labs)

NE3509M04 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (CEL)

NE3510M04 HETERO JUNCTION FIELD EFFECT TRANSISTOR (CEL)

NE3511S02 X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (CEL)

NE3512S02 HETERO JUNCTION FIELD EFFECT TRANSISTOR (CEL)

NE3513M04 N-Channel GaAs HJ-FET (Renesas)

NE3514S02 K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (CEL)

NE3516S02 N-Channel GaAs HJ-FET (Renesas)

TAGS

NE3503M04 BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER California Eastern Labs

Image Gallery

NE3503M04 Datasheet Preview Page 2 NE3503M04 Datasheet Preview Page 3

NE3503M04 Distributor