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NE3508M04 - HETERO JUNCTION FIELD EFFECT TRANSISITOR

Features

  • - Super Low Noise Figure & Associated Gain : NF=0.45dB TYP. Ga=14dB TYP. @f=2GHz, VDS=2V, ID=10mA - Flat-lead 4-pin tin-type super mini-mold(M04) package (Pb-Free T. ).

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Datasheet Details

Part number NE3508M04
Manufacturer California Eastern Labs
File Size 1.30 MB
Description HETERO JUNCTION FIELD EFFECT TRANSISITOR
Datasheet download datasheet NE3508M04 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com PRELIMINARY PRODUCT INFORMATION HETERO JUNCTION FIELD EFFECT TRANSISITOR NE3508M04 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES - Super Low Noise Figure & Associated Gain : NF=0.45dB TYP. Ga=14dB TYP. @f=2GHz, VDS=2V, ID=10mA - Flat-lead 4-pin tin-type super mini-mold(M04) package (Pb-Free T. ) APPLICATIONS - Satellite Radio(SDARS, DMB, etc.) antenna LNA - LNA for Micro-wave communication system ORDERING INFORMATION Part Number NE3508M04 NE3508M04-T2 Order Number NE3508M04-A NE3508M04-T2-A Quantity 50pcs (Non reel) 3 Kpcs/reel V79 Marking Supplying Form - 8 mm wide emboss taping - Pin1(Source), Pin2(Drain) face the perforation side of the tape Remark To order evaluation samples, please contact your local NEC sales office.
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