NE5531079A - SILICON POWER MOS FET

Product Overview

California Eastern Labs

Datasheet Details

Part number	NE5531079A
Manufacturer	California Eastern Labs
File Size	382.84 KB
Description	SILICON POWER MOS FET
Datasheet	NE5531079A Datasheet
Additional preview pages of the NE5531079A datasheet.

Product details

Description

The NE5531079A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V radio systems.

Features

High output power.
High linear gain.
Surface mount package.
Single supply : Pout = 40.0 dBm TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm) : GL = 20.5 dB TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 10 dBm) : 5.7  5.7  1.1 mm MAX. : VDS = 7.5 V MAX.
High power added efficiency : add = 68% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm).

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Published: Aug 14, 2014 |