NE5531079A Datasheet SILICON POWER MOS FET

Manufacturer: California Eastern Labs

NE5531079A silicon power mos fet by California Eastern Labs - Datasheet Preview

Datasheet Details

Part number	NE5531079A
Manufacturer	California Eastern Labs
File Size	382.84 KB
Description	SILICON POWER MOS FET
Datasheet	NE5531079A Datasheet

General Description

The NE5531079A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V radio systems.

Die are manufactured using our NEWMOS-M1 technology and housed in a surface mount package.

This device can deliver 40.0 dBm output power with 68% power added efficiency at 460 MHz with 7.5 V supply voltage.

Overview

SILICON POWER MOS FET NE5531079A 7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION.

Key Features

High output power.
High linear gain.
Surface mount package.
Single supply : Pout = 40.0 dBm TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm) : GL = 20.5 dB TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 10 dBm) : 5.7  5.7  1.1 mm MAX. : VDS = 7.5 V MAX.
High power added efficiency : add = 68% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm).

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