NE5531079A Key Features
- High output power
- High linear gain
- Surface mount package
- High power added efficiency : add = 68% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)
- Part: NE5531079A
- Description: SILICON POWER MOS FET
- Manufacturer: California Eastern Labs
- Size: 382.84 KB
Other NE5531079A Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Renesas |
NE5531079A | 7.5V OPERATION SILICON RF POWER LDMOS FET |